Patents by Inventor Nathaniel GREEN

Nathaniel GREEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor and its method of manufacture
    Patent number: 12349405
    Abstract: A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: July 1, 2025
    Assignee: PRAGMATIC SEMICONDUCTOR LIMITED
    Inventors: Richard Price, Nathaniel Green, Neil Davies, Adrian Thorndyke, Feras Alkhalil
  • TRANSISTOR AND ITS METHOD OF MANUFACTURE
    Publication number: 20240088251
    Abstract: A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Richard PRICE, Nathaniel GREEN, Neil DAVIES, Adrian THORNDYKE, Feras ALKHALIL
  • TRANSISTOR AND ITS METHOD OF MANUFACTURE
    Publication number: 20220173219
    Abstract: A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material.
    Type: Application
    Filed: February 17, 2022
    Publication date: June 2, 2022
    Inventors: Richard PRICE, Nathaniel GREEN, Neil DAVIES, Adrian THORNDYKE, Feras ALKHALIL
  • TRANSISTOR AND ITS METHOD OF MANUFACTURE
    Publication number: 20190267462
    Abstract: A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material.
    Type: Application
    Filed: September 20, 2017
    Publication date: August 29, 2019
    Inventors: Richard PRICE, Nathaniel GREEN, Neil DAVIES, Adrian THORNDYKE, Feras ALKHALIL