Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.

Abstract: An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.