Abstract: A method for facilitating adaptive frequency in a processor having a plurality of cores. The method can include conducting tests on the processor; determining, via the processor testing system, default parameters for operating one or more of the cores, wherein the default parameters are based on results of the tests and cause one or more of the cores to operate within production yield goals of the processor; determining alternative parameters for operating one or more of the cores, wherein the alternative parameters are based on results of the test and cause one or more of the cores to operate outside production yield goals of the processor, and wherein the alternative parameters are usable to reconfigure one or more of the cores after an initial operation per the default parameters; and writing the default parameters and the alternative parameters to a production data storage of the processor.

Abstract: A method for facilitating adaptive frequency in a processor having a plurality of cores. The method can include conducting tests on the processor; determining, via the processor testing system, default parameters for operating one or more of the cores, wherein the default parameters are based on results of the tests and cause one or more of the cores to operate within production yield goals of the processor; determining alternative parameters for operating one or more of the cores, wherein the alternative parameters are based on results of the test and cause one or more of the cores to operate outside production yield goals of the processor, and wherein the alternative parameters are usable to reconfigure one or more of the cores after an initial operation per the default parameters; and writing the default parameters and the alternative parameters to a production data storage of the processor.

Abstract: A processor can have a plurality of cores. A first core processor of a first core can read one or more values of a default parameter set. The first core can be operated in accordance with a first operating characteristic based, at least in part, on the one or more values of the default parameter set. The first core processor can receive an indication to change the operating characteristic of the first core processor. In response to receiving the indication to change the operating characteristic, a signal can be issued to the first core processor to reset. In response to the reset, the first core processor can read one or more values of an alternative parameter set. The first core processor can then be operated in accordance with a second operating characteristic based, at least in part, on the one or more values of the alternative parameter set.

Abstract: A processor can have a plurality of cores. A first core processor of a first core can read one or more values of a default parameter set. The first core can be operated in accordance with a first operating characteristic based, at least in part, on the one or more values of the default parameter set. The first core processor can receive an indication to change the operating characteristic of the first core processor. In response to receiving the indication to change the operating characteristic, a signal can be issued to the first core processor to reset. In response to the reset, the first core processor can read one or more values of an alternative parameter set. The first core processor can then be operated in accordance with a second operating characteristic based, at least in part, on the one or more values of the alternative parameter set.

Abstract: A system and method sorts integrated circuit devices. Integrated circuit devices are manufactured on a wafer according to an integrated circuit design using manufacturing equipment. The design produces integrated circuit devices that are identically designed and perform differently based on manufacturing process variations. The integrated circuit devices are for use in a range of environmental conditions, when placed in service. Testing is performed on the integrated circuit devices. Environmental maximums are individually predicted for each device. The environmental maximums comprise ones of the environmental conditions that must not be exceeded for each device to perform above a given failure rate. Each integrated circuit device is assigned at least one of a plurality of grades based on the environmental maximums predicted for each device.

Abstract: A semiconductor comprising a front end of line portion including a logical processing unit (LPU) and a second LPU. The first LPU configured to perform a first operation and the second LPU configured to perform a second operation following the first operation. A back end of line portion including a plurality of wiring levels, and further including a power gate and a clock gate that are integrated into one or more wiring levels of the plurality of wiring levels. The power gate and clock gate are further electrically connected to the first LPU by an enable wire. The power gate and clock gate are electrically connected to a power grid and a clock net, respectively, by the enable wire, and the enable wire is further electrically connected to a latch of the second LPU. A signal wire is electrically connected to the first LPU and to the latch.

Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract: An electronic system is disclosed, which may include a phase pipeline, a data pipeline, an input phase selector, and an output phase selector. The phase pipeline may have latches clocked by a clock signal, and designed to propagate phase signals from a phase input to a phase output. The data pipeline may have latches clocked by the phase pipeline clock signal, and designed to propagate data from a data input to a data output. The input phase selector may be designed to provide an inverted or a non-inverted copy of data from a data input, in response to a value at the phase input, to the data pipeline data input. The output phase selector may be designed to provide an inverted or a non-inverted copy of data from the data pipeline output to an output phase selector data output, in response to a phase pipeline output value.

Abstract: An electronic system is disclosed, which may include a phase pipeline, a data pipeline, an input phase selector, and an output phase selector. The phase pipeline may have latches clocked by a clock signal, and designed to propagate phase signals from a phase input to a phase output. The data pipeline may have latches clocked by the phase pipeline clock signal, and designed to propagate data from a data input to a data output. The input phase selector may be designed to provide an inverted or a non-inverted copy of data from a data input, in response to a value at the phase input, to the data pipeline data input. The output phase selector may be designed to provide an inverted or a non-inverted copy of data from the data pipeline output to an output phase selector data output, in response to a phase pipeline output value.

Abstract: An electronic system is disclosed, which may include a phase pipeline, a data pipeline, an input phase selector, and an output phase selector. The phase pipeline may have latches clocked by a clock signal, and designed to propagate phase signals from a phase input to a phase output. The data pipeline may have latches clocked by the phase pipeline clock signal, and designed to propagate data from a data input to a data output. The input phase selector may be designed to provide an inverted or a non-inverted copy of data from a data input, in response to a value at the phase input, to the data pipeline data input. The output phase selector may be designed to provide an inverted or a non-inverted copy of data from the data pipeline output to an output phase selector data output, in response to a phase pipeline output value.

Abstract: An electronic system is disclosed, which may include a phase pipeline, a data pipeline, an input phase selector, and an output phase selector. The phase pipeline may have latches clocked by a clock signal, and designed to propagate phase signals from a phase input to a phase output. The data pipeline may have latches clocked by the phase pipeline clock signal, and designed to propagate data from a data input to a data output. The input phase selector may be designed to provide an inverted or a non-inverted copy of data from a data input, in response to a value at the phase input, to the data pipeline data input. The output phase selector may be designed to provide an inverted or a non-inverted copy of data from the data pipeline output to an output phase selector data output, in response to a phase pipeline output value.

Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Abstract: Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling device formed on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction. In other embodiments, the method comprises forming an electronic device on a first side of a semiconductor structure. The method also comprises forming a thermoelectric cooling device on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction.

Abstract: Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling device formed on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction. In other embodiments, the method comprises forming an electronic device on a first side of a semiconductor structure. The method also comprises forming a thermoelectric cooling device on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction.

Abstract: Various embodiments provide systems, computer program products and computer implemented methods. Some embodiments include a system for modeling a relationship between a test time and a defect rate for a systematic multivariate issue caused by at least one predictable component and a random component in a semiconductor testing environment, the multivariate issue causing failure of a semiconductor device, the system that includes at least one computing device configured to perform actions including quantifying the at least one predictable component to produce at least one first mathematical form, quantifying the random component using distribution functions to produce a second mathematical form and producing a mathematical model of a relationship between the test time and the defect rate at a test condition by mathematically combining the at least one first mathematical form and the second mathematical form.

Abstract: Various embodiments include approaches for determining burn-in workload conditions for an integrated circuit (IC) design. Some embodiments include burn-in testing the IC design using the workload conditions. In some embodiments, a computer implemented method includes obtaining survey data about at least one application workload for an integrated circuit (IC) corresponding to an IC design; generating latch state and clocking statistics about the IC design for the at least one application workload based upon the survey data; and determining a set of burn-in workload conditions for the IC design based upon the latch state and clocking statistics about the IC design.

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract: A system and method sorts integrated circuit devices. Integrated circuit devices are manufactured on a wafer according to an integrated circuit design using manufacturing equipment. The design produces integrated circuit devices that are identically designed and perform differently based on manufacturing process variations. The integrated circuit devices are for use in a range of environmental conditions, when placed in service. Testing is performed on the integrated circuit devices. Environmental maximums are individually predicted for each device. The environmental maximums comprise ones of the environmental conditions that must not be exceeded for each device to perform above a given failure rate. Each integrated circuit device is assigned at least one of a plurality of grades based on the environmental maximums predicted for each device.

Abstract: A design structure for an apparatus for utilizing a single set of one or more thermal sensors, e.g., thermal diodes, provided on the integrated circuit device, chip, etc., to control the operation of the integrated circuit device, associated cooling system, and high-frequency PLLs, is provided. By utilizing a single set of thermal sensors to provide multiple functions, e.g., controlling the operation of the integrated circuit device, the cooling system, and the PLLs, silicon real-estate usage is reduced through combining circuitry functionality. Moreover, the integrated circuit device yield is improved by reducing circuitry complexity and increasing PLL robustness to temperature. Furthermore, the PLL circuitry operating range is improved by compensating for temperature.