Patents by Inventor Nathaniel R. Quick

Nathaniel R. Quick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170285351
    Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.
    Type: Application
    Filed: November 11, 2015
    Publication date: October 5, 2017
    Inventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
  • Publication number: 20170131556
    Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.
    Type: Application
    Filed: November 11, 2015
    Publication date: May 11, 2017
    Inventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
  • Patent number: 9620667
    Abstract: A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: April 11, 2017
    Assignee: AppliCote Associates LLC
    Inventors: Nathaniel R Quick, Michael C Murray
  • Patent number: 9601641
    Abstract: A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 1020 atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: March 21, 2017
    Assignee: AppliCote Associates, LLC
    Inventors: Nathaniel R Quick, Michael C Murray
  • Patent number: 9343310
    Abstract: An apparatus and a method are disclosed for forming electrical conductors and/or semiconductors on a glass substrate. The electrical conductors and/or semiconductors are formed by applying a conducting material or a semiconductor material to a surface of the glass substrate and irradiating the interface with a focused laser beam transmitted through the glass. An electrical conductor may be formed on a glass substrate or a semiconductor substrate to provide an electrical antenna for radio frequency communication.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: May 17, 2016
    Inventors: Nathaniel R Quick, Michael C Murray
  • Patent number: 9211609
    Abstract: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: December 15, 2015
    Assignee: Intel Corporation
    Inventors: Islam A. Salama, Nathaniel R. Quick, Aravinda Kar
  • Patent number: 9064798
    Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: June 23, 2015
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama
  • Patent number: 9059079
    Abstract: A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: June 16, 2015
    Assignees: UT-Battelle, LLC, APPLICOTE, LLC
    Inventors: Nathaniel R Quick, Pooran C Joshi, Chad Edward Duty, Gerald Earle Jellison, Jr., Joseph Attilio Angelini
  • Patent number: 8912549
    Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: December 16, 2014
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama
  • Patent number: 8828769
    Abstract: A solid-state energy conversion device and method of making is disclosed wherein the solid-state energy conversion device is formed through the conversion of an insulating material. In one embodiment, the solid-state energy conversion device operates as a photovoltaic device to provide an output of electrical energy upon an input of electromagnetic radiation. In another embodiment, the solid-state energy conversion device operates as a light emitting device to provide an output of electromagnetic radiation upon an input of electrical energy. In one example, the photovoltaic device is combined with a solar liquid heater for heating a liquid. In another example, the photovoltaic device is combined with a solar liquid heater for treating water.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: September 9, 2014
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8772061
    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: July 8, 2014
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8722451
    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: May 13, 2014
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8674373
    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: March 18, 2014
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8617965
    Abstract: A method is disclosed for making a high crystalline quality layer in a surface region of a wide bandgap material substrate. The high crystalline quality layer is formed by directing a thermal energy beam onto the wide bandgap material in the presence of a doping gas for converting a layer of the wide bandgap material into the high crystalline quality layer. Various electrical, optical and electro-optical components may be formed within the high crystalline quality layer through a further conversion process. In an alternative embodiment, the high crystalline quality layer may be embedded within the wide bandgap material.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: December 31, 2013
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8617669
    Abstract: An apparatus and method is disclosed for synthesizing graphene comprising the steps of providing a substrate and focusing a laser beam in the presence of a carbon doping gas to induce photolytic decomposition of the gas to atomic carbon. The carbon is photolytically reacted with the substrate to grow graphene.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: December 31, 2013
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8393289
    Abstract: An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: March 12, 2013
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Publication number: 20120292640
    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.
    Type: Application
    Filed: February 10, 2012
    Publication date: November 22, 2012
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Publication number: 20120064655
    Abstract: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
    Type: Application
    Filed: May 27, 2011
    Publication date: March 15, 2012
    Applicant: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8114693
    Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: February 14, 2012
    Assignee: Partial Assignment University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar
  • Patent number: 8080836
    Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: December 20, 2011
    Assignee: University of Central Florida
    Inventors: Nathaniel R. Quick, Aravinda Kar, Islam A. Salama