Abstract: A mixing apparatus includes a well plate assembly including a fixed support, and a well movable with respect to the fixed support. A fixed sensor mount has a first portion disposed above the well and a second portion disposed within the well. A plurality of electromagnets are operable to move the well plate assembly vertically with respect to the fixed sensor mount and the fixed support.

Abstract: A sensing device includes a first substrate having a plurality of TSVs extending therethrough, and a second substrate positioned adjacent the first substrate, with the TSVs being electrically connected to the second substrate. At least one carbon nanotube sensor is positioned on the first substrate. Each of a plurality of contact pads is positioned on the first substrate and on one of the carbon nanotube sensors such that each contact pad is electrically connected to one of the TSVs and the one of the carbon nanotube sensors, and such that an end of the one of the carbon nanotube sensors is embedded in the contact pad.

Abstract: A mixing apparatus includes a well plate assembly including a fixed support, and a well movable with respect to the fixed support. A fixed sensor mount has a first portion disposed above the well and a second portion disposed within the well. A plurality of electromagnets are operable to move the well plate assembly vertically with respect to the fixed sensor mount and the fixed support.

Abstract: A sensing device includes a first substrate having a plurality of TSVs extending therethrough, and a second substrate positioned adjacent the first substrate, with the TSVs being electrically connected to the second substrate. At least one carbon nanotube sensor is positioned on the first substrate. Each of a plurality of contact pads is positioned on the first substrate and on one of the carbon nanotube sensors such that each contact pad is electrically connected to one of the TSVs and the one of the carbon nanotube sensors, and such that an end of the one of the carbon nanotube sensors is embedded in the contact pad.

Abstract: Devices and methods are disclosed having (a) an exposed semiconducting single walled carbon nanotube channel on the surface of a substrate, wherein the exposed semiconducting single walled carbon nanotube channel is functionalized with a capture moiety cognate to a target analyte, (b) a source electrode and a drain electrode connecting opposite ends of the exposed semiconducting single walled carbon nanotube channel, and (c) wherein the source electrode and the drain electrode are electrically connected in a manner to detect changes in current through the exposed semiconducting single walled carbon nanotube channel in response to analyte in contact therewith,

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

Abstract: Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

Abstract: Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.

Abstract: Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.

Abstract: Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.

Abstract: Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.

Abstract: Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.

Abstract: Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.

Abstract: Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.

Abstract: Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.