Patents by Inventor Natsuhiro Sano

Natsuhiro Sano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11453687
    Abstract: A production method by which a biarylphosphine useful as a Buchwald phosphine ligand can be obtained in high purity is provided through an industrially advantageous process. The production method of a biarylphosphine comprises a step A of reacting a lithiated product obtained through lithiation of a halogenated benzene derivative with a benzene derivative to obtain a biphenyl derivative, and a step B of the reacting the biphenyl derivative with a halogenated phosphine. In the step A, the charge molar ratio of the halogenated benzene derivative to the benzene derivative is preferably 1.0 to 5.0.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: September 27, 2022
    Assignee: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Ken Tamura, Yuki Sawatsugawa, Natsuhiro Sano
  • Patent number: 11407863
    Abstract: A coated particle according to the present invention is a coated particle containing a conductive metal-coated particle having a metal film formed on a surface of a core material, the conductive metal-coated particle coated with an insulation layer containing a polymer, wherein the insulation layer has a phosphonium group. The insulation layer preferably contains an insulating fine particle and the fine particle has a phosphonium group on a surface thereof, or the insulation layer is preferably a film having a phosphonium group. In addition, the metal is preferably at least one selected from nickel, gold, nickel alloys, and gold alloys. The polymer constituting the insulation layer is preferably at least one polymerized product selected from styrenes, esters, and nitriles.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: August 9, 2022
    Assignee: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Tomonao Naruhashi, Natsuhiro Sano, Eri Furui
  • Publication number: 20220204537
    Abstract: There is provided a novel optically active bisphosphinomethane useful as a ligand for an asymmetric catalyst, excellent in oxidation resistance in air, and easy in handling. There is also provided a transition metal complex using the optically active bisphosphinoraethane having excellent asymmetric catalytic ability as a ligand. The optically active bisphosphinomethane is represented by the general formula (1), and the transition metal complex has the optically active bisphosphinomethane as a ligand. (In the formula, R1 represents an adamantyl group; R2 represents a branched alkyl group having 3 or more carbon atoms; and * represents an asymmetric center on a phosphorus atom.
    Type: Application
    Filed: June 9, 2020
    Publication date: June 30, 2022
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Tsuneo Imamoto, Ken Tamura, Natsuhiro Sano
  • Publication number: 20220169667
    Abstract: A production method by which a biarylphosphine useful as a Buchwald phosphine ligand can be obtained in high purity is provided through an industrially advantageous process. The production method of a biarylphosphine comprises a step A of reacting a lithiated product obtained through lithiation of a halogenated benzene derivative with a benzene derivative to obtain a biphenyl derivative, and a step B of the reacting the biphenyl derivative with a halogenated phosphine. In the step A, the charge molar ratio of the halogenated benzene derivative to the benzene derivative is preferably 1.0 to 5.0.
    Type: Application
    Filed: March 30, 2020
    Publication date: June 2, 2022
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Ken Tamura, Yuki Sawatsugawa, Natsuhiro Sano
  • Patent number: 11084835
    Abstract: Provided is a 2,3-bisphosphinopyrazine derivative represented by the following general formula (1), wherein R1, R2, R3, and R4 represent an optionally substituted straight-chain or branched alkyl group having 1 to 10 carbon atoms, an optionally substituted cycloalkyl group, an optionally substituted adamantyl group, or an optionally substituted phenyl group, R5 represents an optionally substituted alkyl group having 1 to 10 carbon atoms or an optionally substituted phenyl group, each R5 may be the same group or a different group, R6 represents a monovalent substituent, n denotes an integer of 0 to 2.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 10, 2021
    Assignees: NIPPON CHEMICAL INDUSTRIAL CO., LTD., NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Hajime Ito, Hiroaki Iwamoto, Tsuneo Imamoto, Ken Tamura, Natsuhiro Sano
  • Publication number: 20210122886
    Abstract: A coated particle according to the present invention is a coated particle containing a conductive metal-coated particle having a metal film formed on a surface of a core material, the conductive metal-coated particle coated with an insulation layer containing a polymer, wherein the insulation layer has a phosphonium group. The insulation layer preferably contains an insulating fine particle and the fine particle has a phosphonium group on a surface thereof, or the insulation layer is preferably a film having a phosphonium group. In addition, the metal is preferably at least one selected from nickel, gold, nickel alloys, and gold alloys. The polymer constituting the insulation layer is preferably at least one polymerized product selected from styrenes, esters, and nitriles.
    Type: Application
    Filed: April 25, 2018
    Publication date: April 29, 2021
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Tomonao Naruhashi, Natsuhiro Sano, Eri Furui
  • Publication number: 20210047351
    Abstract: Provided is a 2,3-bisphosphinopyrazine derivative represented by the following general formula (1), wherein R1, R2, R3, and R4 represent an optionally substituted straight-chain or branched alkyl group having 1 to 10 carbon atoms, an optionally substituted cycloalkyl group, an optionally substituted adamantyl group, or an optionally substituted phenyl group, R5 represents an optionally substituted alkyl group having 1 to 10 carbon atoms or an optionally substituted phenyl group, each R5 may be the same group or a different group, R6 represents a monovalent substituent, n denotes an integer of 0 to
    Type: Application
    Filed: March 1, 2019
    Publication date: February 18, 2021
    Applicants: Nippon Chemical Industrial Co., Ltd., NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Hajime Ito, Hiroaki Iwamoto, Tsuneo Imamoto, Ken Tamura, Natsuhiro Sano
  • Patent number: 7109286
    Abstract: A phosphorus-containing hydroquinone derivative represented by a general formula (1): (where R1 and R2 represent linear or branched alkyl groups that are identical or may be different, and/or R1 and R2 may form a circular group; X represents an oxygen atom or sulfur atom; Y and Z represent hydrogen atom, hydroxy group, linear or branched alkyl group, aralkyl group, alkoxy group, allyl group, aryl group or cyano group, and/or Y and Z may form a circular group). The present invention provides phosphorus-containing hydroquinone derivatives that are useful for intermediate materials for reactive type flame-retardant agents or phosphorus-containing epoxy resins.
    Type: Grant
    Filed: June 20, 2001
    Date of Patent: September 19, 2006
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventors: Ken Tamura, Eiichi Tatsuya, Yoshirou Kaneda, Natsuhiro Sano
  • Publication number: 20030125433
    Abstract: A phosphorus-containing hydroquinone derivative represented by a general formula (1): 1
    Type: Application
    Filed: December 26, 2002
    Publication date: July 3, 2003
    Inventors: Ken Tamura, Eiichi Tatsuya, Yoshirou Kaneda, Natsuhiro Sano
  • Patent number: 6025525
    Abstract: A highly pure monoalkylphosphine which is useful as a starting material for producing a compound semiconductor, and a method for producing same in high yield are provided. The highly pure monoalkylphosphine is represented by the general formula RPH.sub.2 (wherein R is an alkyl group having 1 to 8 carbon atoms), has a purity of not less than 99.999%, and is substantially free of sulfur and silica. In the method of producing said highly pure monoalkylphosphine, anhydrous hydrofluoric acid is used as a catalyst for a reaction between phosphine and an alkene, and the reaction is carried out in the presence of an organic solvent having a boiling point higher than that of the resulting monoalkylphosphine; the resulting reaction mixture is contacted with an alkali solution so that the remaining catalyst is removed into an aqueous phase in the form of a fluoride salt; next, the obtained reaction mixture is contacted with an alkali hydride and the impurities are removed, then distillation is carried out.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: February 15, 2000
    Assignees: Nippon Chemical Industrial Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Masashi Sugiya, Tsutomu Watanabe, Natsuhiro Sano
  • Patent number: 5892120
    Abstract: A highly pure monoalkylphosphine which is useful as a starting material for producing a compound semiconductor, and a method for producing same in high yield are provided. A highly pure monoalkylphosphine represented by the general formula RPH.sub.2 (wherein R is an alkyl group having 1 to 8 carbon atoms) has a purity of not less than five nines, and is substantially free of sulfur and silica. In the method of producing said highly pure monoalkylphosphine, anhydrous hydrofluoric acid is used as a catalyst for a reaction between phosphine and an alkene, and the reaction is carried out in the presence of an organic solvent having a boiling point higher than that of the resulting monoalkylphosphine; the resulting reaction mixture is contacted with an alkali solution so that the remaining catalyst is removed into an aqueous phase in the form of a fluoride salt; next, the obtained reaction mixture is contacted with an alkali hydride and the impurities are removed, then distillation is carried out.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: April 6, 1999
    Assignees: Nippon Chemical Industrial Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Masashi Sugiya, Tsutomu Watanabe, Natsuhiro Sano