Abstract: A chip resistor is capable of improving surge characteristic while finely adjusting a resistance value with high accuracy. A chip resistor includes a resistor which is print-formed such that a first meandering portion is consecutively connected to a second meandering portion across a rectangular adjustment portion. The adjustment portion is provided with a first trimming groove to lengthen a current path of the resistor, thereby improving the surge characteristic while coarsely adjusting a resistance value of the resistor to bring it close to a target resistance value. Furthermore, a second trimming groove is provided in an area of the second meandering portion where a current distribution is small, thereby finely adjusting the resistance value of the resistor to make it coincide with the target resistance value in accordance with a cutting amount of the second trimming groove.

Abstract: An object is to provide a chip resistor in which hot spots can be dispersed and the adverse effects on performance caused by microcracks can also be reduced. A chip resistor includes an insulating substrate, a resistive element, and electrodes. In the resistive element, a first trimming groove and a second trimming groove are formed. A first vertical groove of the first trimming groove and a second vertical groove of the second trimming groove are formed with a spacing in between in an X1-X2 direction. A first horizontal groove of the first trimming groove and a second horizontal groove of the second trimming groove extend in directions approaching each other, and terminal ends of the first horizontal groove and the second horizontal groove are formed to be separated in the X1-X2 direction such that the first horizontal groove and the second horizontal groove do not overlap in a Y1-Y2 direction.

Abstract: This thick-film resistive element paste is a resistive element paste containing: an electrically conductive metal powder including a copper powder and a manganese powder; a glass powder; and an organic vehicle, and is characterized in that the glass powder contains primarily an alkaline-earth metal.

Abstract: A chip resistor is capable of improving surge characteristic while finely adjusting a resistance value with high accuracy. A chip resistor includes a resistor which is print-formed such that a first meandering portion is consecutively connected to a second meandering portion across a rectangular adjustment portion. The adjustment portion is provided with a first trimming groove to lengthen a current path of the resistor, thereby improving the surge characteristic while coarsely adjusting a resistance value of the resistor to bring it close to a target resistance value. Furthermore, a second trimming groove is provided in an area of the second meandering portion where a current distribution is small, thereby finely adjusting the resistance value of the resistor to make it coincide with the target resistance value in accordance with a cutting amount of the second trimming groove.

Abstract: Regarding a chip resistor including a resistor provided with a first trimming groove for coarse adjustment and a second trimming groove for fine adjustment, the steps of setting the length of a first lateral direction cut part of the first trimming groove after L-shaped direction turning to be a certain length, setting coordinates of a trimming start point of the second trimming groove at a position which is constantly separated from a first vertical direction cut part of the first trimming groove only by a certain distance, and irradiating with a laser light from the coordinates toward a direction orthogonal to a direction between the electrodes are performed to form the second trimming groove which faces the first trimming groove and is oriented in the direction opposite to the orientation of the first trimming groove.

Abstract: An object is to provide a chip resistor in which hot spots can be dispersed and the adverse effects on performance caused by microcracks can also be reduced. A chip resistor includes an insulating substrate, a resistive element, and electrodes. In the resistive element, a first trimming groove and a second trimming groove are formed. A first vertical groove of the first trimming groove and a second vertical groove of the second trimming groove are formed with a spacing in between in an X1-X2 direction. A first horizontal groove of the first trimming groove and a second horizontal groove of the second trimming groove extend in directions approaching each other, and terminal ends of the first horizontal groove and the second horizontal groove are formed to be separated in the X1-X2 direction such that the first horizontal groove and the second horizontal groove do not overlap in a Y1-Y2 direction.

Abstract: This thick-film resistive element paste is a resistive element paste containing: an electrically conductive metal powder including a copper powder and a manganese powder; a glass powder; and an organic vehicle, and is characterized in that the glass powder contains primarily an alkaline-earth metal.

Abstract: According to one embodiment, a non-volatile semiconductor memory device comprises memory strings. Each memory string comprises a semiconductor layer, control gates, a first selection gate, and a second selection gate. A semiconductor layer comprises a pair of pillar portions which extend in a vertical direction to a substrate, and a coupling portion formed to couple the pair of pillar portions. Control gates orthogonally intersect one of the pair of pillar portions or the other of the pair of pillar portions. A first selection gate orthogonally intersects one of the pair of pillar portions and is formed above the control gates. A second selection gate orthogonally intersects the other of the pair of pillar portions, is formed above the control gates, and is on the same level as the first selection gate as well as integrated with the first selection gate.

Abstract: According to one embodiment, a non-volatile semiconductor memory device comprises memory strings. Each memory string comprises a semiconductor layer, control gates, a first selection gate, and a second selection gate. A semiconductor layer comprises a pair of pillar portions which extend in a vertical direction to a substrate, and a coupling portion formed to couple the pair of pillar portions. Control gates orthogonally intersect one of the pair of pillar portions or the other of the pair of pillar portions. A first selection gate orthogonally intersects one of the pair of pillar portions and is formed above the control gates. A second selection gate orthogonally intersects the other of the pair of pillar portions, is formed above the control gates, and is on the same level as the first selection gate as well as integrated with the first selection gate.