Abstract: In an electroplating apparatus, an electrolytic agent is filled into the portion between an anode and a dummy cathode which is opposite substantially face to face and parallel to the anode, and an electric current is supplied to this portion, thereby suppressing changes in properties of a black film during the period in which plating to a substrate to be processed is stopped. In particular, by applying an electric current to the anode immediately before plating to the substrate is resumed, the film formation characteristics of plating to the substrate can be maximally stabilized. This can reduce the consumption power and dissolution of the anode. This apparatus is particularly effective in copper plating in which the formation of a black film is significant.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to load and unload a substrate, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: This invention relates to a semiconductor substrate processing apparatus and method for forming interconnects by filling a circuit pattern groove and/or a hole formed in a semiconductor substrate with a plated metal film, and removing the plated metal film while leaving the metal film at the filled portion. The apparatus comprises a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate, which has a circuit formed on a surface thereof, in a dry state; a plated metal film forming unit for forming a plated metal film on the semiconductor substrate which has been carried in; a bevel etching unit for etching a peripheral edge portion of the semiconductor substrate; a polishing unit for polishing at least part of the plated metal film on the semiconductor substrate; and a transport mechanism for transporting the semiconductor substrate between the above units.