Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second

Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

Abstract: A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).

Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.

Abstract: The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points.

Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

Abstract: A charged particle beam apparatus includes: an electromagnetic wave generation source 16 that generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanism 3 and irradiates the sample with a focused charged particle beam; a detector 10 that detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unit 15 that controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unit 14 that controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit 13.

Abstract: The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample.

Abstract: The present invention provides an electron microscope and an observation method capable of observing secondary electrons in the atmosphere. In detail, a charged particle microscope of the invention includes: a partition wall that separates a non-vacuum space in which a sample is loaded from a vacuum space inside a charged particle optical lens barrel; an upper electrode; a lower electrode on which the sample is loaded; a power supply for applying a voltage to at least one of the upper electrode and the lower electrode; a sample gap adjusting mechanism for adjusting a gap between the sample and the partition wall; and an image forming unit for forming an image of the sample based on the current absorbed by the lower electrode. The secondary electrons are selectively measured by using an amplification effect due to ionization collision between electrons and gas molecules generated when a voltage is applied between the upper electrode and the lower electrode.

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons.

Abstract: A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the plurality

Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy.

Abstract: In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

Abstract: A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.