Abstract: A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.

Abstract: A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.

Abstract: A device for manufacturing a SiC substrate, in which formation of macro-step bunching is suppressed, comprises: a main body container that is capable of accommodating a SiC substrate and generates, by heating, a vapor pressure of gaseous species containing Si elements and gaseous species containing C elements, in an internal space; and a heating furnace that accommodates the main body container and performs heating so that a vapor pressure of the gaseous species containing Si elements is generated and a temperature gradient is formed, wherein the main body container has an etching space S1 and a Si vapor supply source capable of supplying Si vapor into the main body container, the etching space S1 being formed by making the SiC substrate face a portion of the main body container arranged on a lower-temperature side of the temperature gradient while the SiC substrate is disposed on a higher-temperature side of the temperature gradient.

Abstract: An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched.

Abstract: The present invention provides a therapeutic or improving agent for a lifestyle-related disease, containing an expression vector encoding a chimeric Hepatitis B virus core antigen polypeptide inserted with an amino acid sequence containing a specific epitope of the lifestyle-related disease-related factor, wherein the amino acid sequence containing the specific epitope is inserted between the amino acid residues 80 and 81 of the hepatitis B virus core antigen polypeptide.

Abstract: The present invention provides a therapeutic or improving agent for a lifestyle-related disease, containing an expression vector encoding a chimeric Hepatitis B virus core antigen polypeptide inserted with an amino acid sequence containing a specific epitope of the lifestyle-related disease-related factor, wherein the amino acid sequence containing the specific epitope is inserted between the amino acid residues 80 and 81 of the hepatitis B virus core antigen polypeptide.

Abstract: A measuring method for a time resolved emission spectrum or a time resolved excitation spectrum, wherein when emission transient waveforms from a pulse-excited sample are measured by the time correlation photon counting method; the emission transient waveforms are measured at every optimum wavelength in a problematical emission spectrum region; the measured emission transient waveforms are stored in a memory in order and at every wavelength; all the transient waveforms in each wavelength are measured; thereafter, the time resolved emission spectrum or the time resolved excitation spectrum is produced on the basis of all the above-mentioned stored emission transient waveform data, thereby enabling the proper spectrum to be produced efficiently.