Patents by Inventor Naum Petrovich Soshchin

Naum Petrovich Soshchin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 8546830
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: October 1, 2013
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE
    Publication number: 20130099244
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Application
    Filed: April 11, 2012
    Publication date: April 25, 2013
    Applicants: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Vladimir Semenovich ABRAMOV, Naum Petrovich SOSHCHIN, Valeriy Petrovich SUSHKOV, Nikolay Valentinovich SHCHERBAKOV, Vladimir Vladimirovich ALENKOV, Sergei Aleksandrovich SAKHAROV, Vladimir Aleksandrovich GORBYLEV
  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 8174042
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: May 8, 2012
    Assignees: Seoul Semiconductor Co., Ltd., Vladimir Semenovich Abramov
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE
    Publication number: 20110266555
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Application
    Filed: July 14, 2011
    Publication date: November 3, 2011
    Applicants: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich ABRAMOV, Naum Petrovich SOSHCHIN, Valeriy Petrovich SUSHKOV, Nikolay Valentinovich SHCHERBAKOV, Vladimir Vladimirovich ALENKOV, Sergei Aleksandrovich SAKHAROV, Vladimir Aleksandrovich GORBYLEV
  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 7998773
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN(0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: August 16, 2011
    Assignees: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • LUMINESCENT SCREEN
    Publication number: 20090072701
    Abstract: A cathodoluminescent mosaic screen on a light-transparent substrate wherein the light-emitting components of the screen are implemented as light-guiding single-crystalline columns. A method for preparation of the screen by vapor deposition of the luminescent material onto the substrate coated by a localized liquid phase has been proposed.
    Type: Application
    Filed: October 8, 2008
    Publication date: March 19, 2009
    Inventors: Evgeny Invievich Givargizov, Ljudmila Alexandrovna Zadorozhnaya, Alla Nikolaevna Stepanova, Naum Petrovich Soshchin, Nikolai Nikolaevich Chubun, Mikhail Evgenievich Givargizov