Patents by Inventor Nauman H. Kahn

Nauman H. Kahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD TO MITIGATE THROUGH-SILICON VIA-INDUCED SUBSTRATE NOISE
    Publication number: 20140073133
    Abstract: A semiconductor manufacture includes a first semiconductor including a substrate die having a first surface and having a second surface upon which integrated circuitry is disposed; a second semiconductor die; a through-silicon via (TSV) extending through the first semiconductor die and electrically connected to the second semiconductor die; and at least one ground plug including an electrically conductive material, positioned proximally to the TSV and extending into the substrate of the first semiconductor die from one of the first surface or the second surface.
    Type: Application
    Filed: March 14, 2012
    Publication date: March 13, 2014
    Applicant: Tufts University
    Inventors: Nauman H. Kahn, Soha Hassoun, Syed M. Alam