Abstract: Methods of fabrication and nano-sensor and nano-sensor array thereof are provided. A sensing electrode assembly can be patterned on a sacrificial layer of a substrate. The sensing electrode assembly can comprise a pair of contact pads and an electrode element coupled to and disposed between the pair of contact pads. The sensing electrode assembly can be formed on the patterned sensing electrode assembly. The sacrificial layer below a portion of the electrode element can be removed to obtain a suspended electrode element. The suspended electrode element can be oxidized at a first predetermined temperature to obtain a pair of electromigrated regions and a notch portion between the pair of the electromigrated regions. The notch portion can be used to detect a gaseous component in an ambient gas at a second predetermined temperature.

Abstract: The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.

Abstract: An electrochemically active, creatinine-binding device is provided to detect and measure quantitatively, creatinine in biological samples. The device of the present invention is also provided with a device to detect and measure quantitatively creatinine and albumin bioanalytes, simultaneously and to determine albumin to creatinine ratio (ACR). The present invention also provides an electrochemically active, creatinine-binding and albumin-binding device, for collection and retention of biological samples, having creatinine and albumin bioanalytes. In the present invention, a device holder is provided to receive the electrochemically active, creatinine-binding and albumin-binding device. The device, point-of-care biosensor and the method of the present invention, facilitate quantitative measurement of creatinine and albumin bioanalytes in urine and blood samples, and albumin to creatinine ratio (ACR), in urine samples, electrochemically, by determining redox current values.

Abstract: A reusable and electrochemically active device 100 is provided comprising, detachable electrode arrangement including working electrodes 101a, 101b, 101c, 101d and a counter electrode 102 that are functionalised with selected electrochemically active receptor(s) that can interact with at least a target bioanalyte. Fluid transportation channels 108a, 108b, 108c, 108d are formed, to receive biological samples with the at least target bioanalyte and for further transportation to the selected electrode arrangement, preferably in a sequential manner, for measuring the concentrations of the target bioanalytes. Used working electrodes 101a, 101b, 101c, 101d and a partial portion of the counter electrode 102 are detachable from the device 100.

Abstract: Methods and devices for quantifying creatinine in a test sample are provided. The test sample is contacted with a sensing composition to obtain a product comprising a hydantoin-transition metal complex and ammonia. The sensing composition comprises creatinine deaminase and a transition metal salt. The creatinine deaminase enzymatically reacts with creatinine to provide the N-methyl hydantoin and ammonia. The N-methyl hydantoin forms the hydantoin-transition metal complex with the transition salt. A potential difference is applied to the product to measure a current signal provided by the hydantoin-transition metal complex. Concentration of N-methyl hydantoin is obtained based on the measured current signal using a calibration equation. The concentration of N-methyl hydantoin is correlated with concentration of creatinine to quantify the creatinine in the test sample.

Abstract: An electrochemically active device for collecting and retaining a biological sample with a bioanalyte, the device provided with at least a two-electrode member and an albumin-binding and an electrochemically active receptor in chemical contact with the two-electrode members and the biological sample. The present invention also provides a point-of-care biosensor with the device of the present invention and a method for measuring a bioanalyte in a biological sample. The device, point-of-care biosensor and the method of the present invention facilitate accurate measurements concentrations of urine albumin, human serum albumin (HSA), glycated albumin (GA) and methemalbumin (MHA) by determining redox current values in reduced volumes of biological samples.

Abstract: An electrochemically active device is provided for collecting and retaining a blood sample with at least a two-electrode member connected to conductive tracks. A receptor with an integral receptor-membrane arranged on the two-electrode member, to receive non-electrochemically active heamoglobin bioanalyte and its complexes from red blood cells (RBC) of said blood sample, through a lysing agent and convert the non-electrochemically active heamoglobin bioanalyte and its complexes, into an electrochemically active bioanalyte and its electrochemically active complexes. The present invention also provides a point-of-care biosensor incorporated with the device of the present invention and method of measuring for the detection and quantitative measurement of concentrations of haemoglobin (Hb), glycated haemoglobin (GHb), methaemoglobin (MetHb) and myoglobin, in reduced volumes of blood samples, by determining redox current values in the reduced volumes of blood samples.

Abstract: Nano-sensors, nano-sensor array and methods of fabrication thereof are provided. A nano-sensor comprises a pair of sensing electrode assemblies aligned longitudinally along a first axis. Each sensing electrode assembly comprises an electrode strip coupled to a contact pad at a first end of the electrode strip. A sensing member is disposed between the pair of sensing electrode assemblies to detect, at a predetermined temperature, presence of a gaseous component. A thermally conductive layer is provided in contact with the sensing member. The nano-sensor comprises a heating assembly, comprising a heating strip disposed between and coupled to a pair of heating contact pads, aligned longitudinally along a second axis substantially perpendicular to the first axis. A portion of the heating strip is in contact with the thermally conductive layer to heat the sensing member through the thermally conductive layer.

Abstract: A device for retaining a biological sample, for measuring a concentration of a SARS-CoV2 specific antigen, with SARS-CoV2 antigen-specific and electrochemically active immunoreceptor that is conjugated with an electrochemically active substance and optionally including an electrode reactivity enhancement agent and antibody stabilization agent. The immunoreceptor is configured to be in chemical contact with electrodes and a biological sample with SARS-CoV2 specific antigen of the device. The present invention also provides a device holder for holding the device of the present invention and a point-of-care biosensor.

Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.

Abstract: The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.

Abstract: Nano-sensors, nano-sensor array and methods of fabrication thereof are provided. A nano-sensor comprises a pair of sensing electrode assemblies aligned longitudinally along a first axis. Each sensing electrode assembly comprises an electrode strip coupled to a contact pad at a first end of the electrode strip. A sensing member is disposed between the pair of sensing electrode assemblies to detect, at a predetermined temperature, presence of a gaseous component. A thermally conductive layer is provided in contact with the sensing member. The nano-sensor comprises a heating assembly, comprising a heating strip disposed between and coupled to a pair of heating contact pads, aligned longitudinally along a second axis substantially perpendicular to the first axis. A portion of the heating strip is in contact with the thermally conductive layer to heat the sensing member through the thermally conductive layer.

Abstract: The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlxTi1-xO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlxTi1-xO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlxTi1-xO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current ˜400 mA/mm, sub-threshold slope of 73 mV/dec, Ron=8.9 ?mm, interface trap density <1010 mm?2eV?1 and gate leakage below 200 nA/mm at the OFF-state breakdown.

Abstract: The invention discloses a system and method for a web-based reservation of geographically dispersed facilities.

Abstract: Methods and devices for quantifying creatinine in a test sample are provided. The test sample is contacted with a sensing composition to obtain a product comprising a hydantoin-transition metal complex and ammonia. The sensing composition comprises creatinine deaminase and a transition metal salt. The creatinine deaminase enzymatically reacts with creatinine to provide the N-methyl hydantoin and ammonia. The N-methyl hydantoin forms the hydantoin-transition metal complex with the transition salt. A potential difference is applied to the product to measure a current signal provided by the hydantoin-transition metal complex. Concentration of N-methyl hydantoin is obtained based on the measured current signal using a calibration equation. The concentration of N-methyl hydantoin is correlated with concentration of creatinine to quantify the creatinine in the test sample.

Abstract: Methods of fabrication and nano-sensor and nano-sensor array thereof are provided. A sensing electrode assembly can be patterned on a sacrificial layer of a substrate. The sensing electrode assembly can comprise a pair of contact pads and an electrode element coupled to and disposed between the pair of contact pads. The sensing electrode assembly can be formed on the patterned sensing electrode assembly. The sacrificial layer below a portion of the electrode element can be removed to obtain a suspended electrode element. The suspended electrode element can be oxidized at a first predetermined temperature to obtain a pair of electromigrated regions and a notch portion between the pair of the electromigrated regions. The notch portion can be used to detect a gaseous component in an ambient gas at a second predetermined temperature.

Abstract: The field effect transistor (FET) of the present subject matter comprises a bottom gate electrode, a bottom gate dielectric provided on the bottom gate electrode, a channel layer provided on the bottom gate dielectric. A top portion comprising a source electrode, a drain electrode, a top gate electrode provided, and a top dielectric layer is provided on the channel layer. The channel layer forms Schottky barriers at points of contact with the source and the drain electrode. A back-gate voltage varies a height and a top-gate voltage varies a width of the Schottky barrier. The FET can be programmed to work in two operating modes-tunnelling (providing low power consumption) and thermionic mode (providing high performance). The FET can also be programmed to combine the tunnelling and thermionic mode in a single operating cycle, yielding high performance with low power consumption.

Abstract: The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlxTi1-xO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlxTi1-xO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlxTi1-xO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current ˜400 mA/mm, sub-threshold slope of 73 mV/dec, Ron=8.9 ?mm, interface trap density <1010 mm?2eV?1 and gate leakage below 200 nA/mm at the OFF-state breakdown.

Abstract: The field effect transistor (FET) of the present subject matter comprises a bottom gate electrode, a bottom gate dielectric provided on the bottom gate electrode, a channel layer provided on the bottom gate dielectric. A top portion comprising a source electrode, a drain electrode, a top gate electrode provided, and a top dielectric layer is provided on the channel layer. The channel layer forms Schottky barriers at points of contact with the source and the drain electrode. A back-gate voltage varies a height and a top-gate voltage varies a width of the Schottky barrier. The FET can be programmed to work in two operating modes-tunnelling (providing low power consumption) and thermionic mode (providing high performance). The FET can also be programmed to combine the tunnelling and thermionic mode in a single operating cycle, yielding high performance with low power consumption.

Abstract: An electrochemically active, creatinine-binding device is provided to detect and measure quantitatively, creatinine in biological samples. The device of the present invention is also provided with a device to detect and measure quantitatively creatinine and albumin bioanalytes, simultaneously and to determine albumin to creatinine ratio (ACR). The present invention also provides an electrochemically active, creatinine-binding and albumin-binding device, for collection and retention of biological samples, having creatinine and albumin bioanalytes. In the present invention, a device holder is provided to receive the electrochemically active, creatinine-binding and albumin-binding device. The device, point-of-care biosensor and the method of the present invention, facilitate quantitative measurement of creatinine and albumin bioanalytes in urine and blood samples, and albumin to creatinine ratio (ACR), in urine samples, electrochemically, by determining redox current values.