Patents by Inventor Navaneetha Krishnan RAVICHANDRAN

Navaneetha Krishnan RAVICHANDRAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Unusual high thermal conductivity in boron arsenide bulk crystals
    Patent number: 11975979
    Abstract: A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: May 7, 2024
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Zhifeng Ren, Fei Tian, Gang Chen, Bai Song, Ke Chen, Li Shi, Xi Chen, Sean Sullivan, David Broido, Navaneetha Krishnan Ravichandran
  • Unusual High Thermal Conductivity in Boron Arsenide Bulk Crystals
    Publication number: 20210269318
    Abstract: A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.
    Type: Application
    Filed: June 20, 2019
    Publication date: September 2, 2021
    Applicant: University of Houston System
    Inventors: Zhifeng REN, Fei TIAN, Gang CHEN, Bai SONG, Ke CHEN, Li SHI, Xi CHEN, Sean SULLIVAN, David BROIDO, Navaneetha Krishnan RAVICHANDRAN