Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Abstract: A system for performing a sidewall image transfer process includes a substrate processing chamber configured to process a substrate including a mandrel layer. A controller is configured to control the substrate processing chamber to, without the substrate being removed from the within the substrate processing chamber, etch the mandrel layer, subsequent to etching the mandrel layer, deposit a thin spacer layer on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls, subsequent to depositing the thin spacer layer, etch the thin spacer layer to remove the thin spacer layer such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains and, subsequent to etching the thin spacer layer, etch the mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels.