Abstract: An example of a memory device may comprise NAND media with a plurality of decks, and circuitry coupled to the NAND media to control access to a superblock of memory cells aligned along a pillar of the NAND media, wherein the superblock includes at least a first block that corresponds to memory cells aligned along the pillar in a first deck of the plurality of decks and a second block that corresponds to memory cells aligned along the pillar in a second deck of the plurality of decks, configure the NAND media in a first program mode for the first block of the superblock, and configure the NAND media in a second program mode for the second block of the superblock. Other examples are disclosed and claimed.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: The size of page map memory in a NAND flash device used to store page related information is decreased by embedding page type in a row address. The row address is received by the NAND flash device from the host on the data bus in a six-cycle sequence. The received row address is used to decode a physical page address received during the row address cycle to obtain a word line and a block segment number for a block segment in the word line in the NAND flash array. A same block segment number is used for each page type in the block segment.

Abstract: Systems, apparatuses and methods may provide for technology that sends a first command to a NAND die, sends first address information to the NAND die, and sends a second command to the NAND die, wherein the first command and the second command define a first command sequence and wherein the first address information signal a beginning of a first asynchronous read request from a first plurality of planes. In one example, the technology also sends a second command sequence and second address information to the NAND die wherein the second command sequence signals an end of the first asynchronous read request.

Abstract: A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.

Abstract: A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.