Patents by Inventor Naveen Tipimeni

Naveen Tipimeni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to increase breakdown voltage of semiconductor devices
    Patent number: 8692293
    Abstract: Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: April 8, 2014
    Assignee: University of South Carolina
    Inventors: M. Asif Khan, Vinod Adivarahan, Qhalid Fareed, Grigory Simin, Naveen Tipimeni