Patents by Inventor Nax N. Yoder

Nax N. Yoder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-performance bipolar microwave transistor
    Patent number: 4380774
    Abstract: A high-frequency transistor and method of making same wherein the parasitic apacitance between base and collector is reduced. The collector layer of GaAs is impregnated with boron ions to form an insulative region under the base contact structure thereby reducing the capacitance in this region and leaving only the region underlying the emitter structure as the active transistor region.
    Type: Grant
    Filed: December 19, 1980
    Date of Patent: April 19, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Nax N. Yoder