Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

Abstract: An image sensor including a semiconductor layer; a stack of insulating layers resting on the back side of the semiconductor layer; a conductive layer portion extending along part of the height of the stack and flush with the exposed surface of the stack; laterally-insulated conductive fingers extending through the semiconductor layer from its front side and penetrating into said layer portion; laterally-insulated conductive walls separating pixel areas, these walls extending through the semiconductor layer from its front side and having a lower height than the fingers; and an interconnection structure resting on the front side of the semiconductor layer and including vias in contact with the fingers.

Abstract: A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.

Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

Abstract: An image sensor including a semiconductor layer; a stack of insulating layers resting on the back side of the semiconductor layer; a conductive layer portion extending along part of the height of the stack and flush with the exposed surface of the stack; laterally-insulated conductive fingers extending through the semiconductor layer from its front side and penetrating into said layer portion; laterally-insulated conductive walls separating pixel areas, these walls extending through the semiconductor layer from its front side and having a lower height than the fingers; and an interconnection structure resting on the front side of the semiconductor layer and including vias in contact with the fingers.

Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

Abstract: A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.

Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.