Abstract: An embodiment of an electronic apparatus may include one or more substrates, and a controller coupled to the one or more substrates, the controller including circuitry to control access to NAND-based storage media that includes a plurality of NAND devices, maintain respective read disturb (RD) counters for each of two or more tracked units at respective granularities, maintain respective global RD counters for each of the two or more tracked units and, in response to a read request, increment one or more global RD counters that correspond to the read request, determine if a global RD counter for a tracked unit matches a random number associated with the tracked unit and, if so determined, increment a RD counter for the tracked unit that corresponds to the read request and generate a new random number for the tracked unit. Other embodiments are disclosed and claimed.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: In one embodiment, the present invention includes a method for writing data into both a volatile portion and an erase block of a non-volatile portion of a storage device, and maintaining the data in the volatile portion until the data is successfully written to the erase block. In this way, enhanced data reliability is provided. Other embodiments are described and claimed.

Abstract: A nonvolatile memory cell comprising a pair of spaced apart shallow trench isolation regions formed in a substrate and defining a substrate active region. A tunnel dielectric is formed on the substrate active region. A floating gate is formed on the tunnel dielectric and is self aligned between the spaced apart shallow trench isolation regions. A dielectric layer is formed on the floating gate and a control gate formed on the dielectric layer. A source region and a drain region are formed in the substrate active region on opposite sides of the floating gate.

Abstract: A nonvolatile memory cell comprising a pair of spaced apart shallow trench isolation regions formed in a substrate and defining a substrate active region. A tunnel dielectric is formed on the substrate active region. A floating gate is formed on the tunnel dielectric and is self aligned between the spaced apart shallow trench isolation regions. A dielectric layer is formed on the floating gate and a control gate formed on the dielectric layer. A source region and a drain region are formed in the substrate active region on opposite sides of the floating gate.

Abstract: A nonvolatile memory cell comprising a pair of spaced apart shallow trench isolation regions formed in a substrate and defining a substrate active region. A tunnel dielectric is formed on the substrate active region. A floating gate is formed on the tunnel dielectric and is self aligned between the spaced apart shallow trench isolation regions. A dielectric layer is formed on the floating gate and a control gate formed on the dielectric layer. A source region and a drain region are formed in the substrate active region on opposite sides of the floating gate.

Abstract: Apparatus for controlling a length of a period during which the output circuitry of a memory array waits before latching the output data including apparatus for detecting the presence of an error in data read from an memory array, apparatus for providing a first value to determine a wait period, apparatus responsive to the detection of an error for providing a second value, apparatus responsive to the first value for generating a signal to latch a data output from the memory array after a first period and responsive to the second value for generating a signal to latch a data output from the memory array after a second period.

Abstract: A voltage Vpp is provided for use in programing and erasing transistors which transistors normally switch with a voltage Vpp centering at X volts in a range varying from X plus Y to X minus Y volts. When transistors in an array are selected to operate in this range, a significant number of the blocks of memory transistors require as much as three times as long to program and erase as do typical memory transistors. The invention provides circuitry for furnishing a voltage Vpp to program and erase the blocks of the memory array which voltage is controlled to be in a range of X to X+Y volts and centers around X+1/2 Y volts.

Abstract: Apparatus for controlling a length of a period during which the output circuitry of a memory array waits before latching the output data including apparatus for detecting the presence of an error in data read from an memory array, apparatus for providing a first value to determine a wait period, apparatus responsive to the detection of an error for providing a second value, apparatus responsive to the first value for generating a signal to latch a data output from the memory array after a first period and responsive to the second value for generating a signal to latch a data output from the memory array after a second period.

Abstract: Circuitry for verifying the preconditioning of shorted cells within a flash memory cell. The preconditioning circuitry accommodates shorted cells, allowing them to pass verification at lower threshold voltage levels than good cells but ensuring the threshold voltage levels of shorted cells are high enough to prevent bitline leakage. The circuitry includes a sense amplifier for comparing the threshold voltage of a memory cell within the memory array to a selected reference threshold voltage level. The sense amplifier indicates whether the array memory cells exceeds the selected reference threshold voltage level. Selection circuitry couples two different reference cells to the sense amplifier, each having a different threshold voltage level. One of the reference cells has a normal threshold voltage level; i.e., a threshold voltage level to which good cells should be preconditioned.

Abstract: A method of preconditioning and verifying the preconditioning of memory cells within shorted rows of a memory array is described. Preconditioning begins by applying a preconditioning pulse to two memory cells that are shorted together. Afterward, one of the two shorted cells is read by applying a nominal gate voltage level to the gates of both of the shorted memory cells. At the same time, a shorted reference cell is read by applying a voltage level to its gate which less than the nominal gate voltage level. While the read voltages are being applied to the array cells and the shorted reference cell, the threshold voltage of one of the two shorted array cells is compared to the threshold voltage of the shorted reference cell. The shorted reference cell has a threshold voltage level that is lower than the level normally required for preconditioning but which is sufficient to prevent the quick overerasure of the shorted memory cells.

Abstract: A precision voltage reference circuit which includes a pair of similar flash EEPROM memory cells, each of the pair of similar flash EEPROM memory cells having a different charge on its floating gate; circuitry for connecting each of said cells in a pair of parallel circuits in which equal current values are generated in an equilibrium condition; apparatus for sensing a voltage in each of said pair of parallel circuits to provide an output voltage which may be used as a reference value when the currents are in equilibrium; and apparatus for sensing variations in the output voltage to vary the current through the flash EEPROM memory cells to bring the currents into equilibrium when the reference voltage varies from the voltage provided at equilibrium.

Abstract: Circuitry for independently controlling the erasure of a flash memory including redundant rows for replacing shorted rows within the memory array is described. An erase command fires a sequencer circuit, which schedules the controllers that execute the tasks of an erase event. By nesting the control of erase events, the sequencer circuit allows easy modification of erase events. The sequencer circuit fires a precondition controller upon receipt of an erase command. The precondition controller then manages the preconditioning of the memory array, including memory cells within shorted rows. The precondition controller does so by disabling the replacement of shorted rows with redundant rows. During preconditioning each memory cell is programmed to a logic 0, before the memory cell is erased to a logic 1, to prevent the overerasure of memory cells during subsequent erasure. Afterward, the sequencer fires the erase controller. The erase control circuit then manages erasure.

Abstract: A method of repairing overerased cells in a flash memory array including a column having a first cell and a second cell is described. Repair begins by determining whether a first cell is overerased and applying a programming pulse if so. Next, the second cell is examined to determine whether it is overerased. A programming pulse is applied to the second cell if it is overerased. Afterward, if either of the cells was overerased then the repair pulse voltage level is incremented. These steps are repeated until none of the cells on the column is identified as overerased.