Abstract: The present invention provides methods and apparatus for accomplishing optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.

Abstract: The present invention provides methods and apparatus for accomplishing optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.

Abstract: The present invention provides methods and apparatus for accomplishing optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.

Abstract: The present invention provides methods and apparatus for accomplishing optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.

Abstract: The present invention provides methods and apparatus for accomplishing a optical direct write phase shift lithography. A lithography system and method are provided wherein a mirror array is configured to generate vortex phase shift optical patterns that are directed onto a photosensitive layer of a substrate. The lithography methods and systems facilitate pattern transfer using such vortex phase shift exposure patterns.

Abstract: The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a off axis light to reduce the effect of zero order light to improve the process window for maskless phase shift lithography systems and methodologies. A lithography system is provided. The lithography system provided uses off axis light beams projected onto a mirror array configured to generate a phase shift optical image pattern. This pattern is projected onto a photoimageable layer formed on the target substrate to facilitate pattern transfer.

Abstract: The present invention provides methods and apparatus for accomplishing a strong phase shift direct write lithography process using reconfigurable optical mirrors. A maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used to generate strong phase shift optical patterns which are directed onto a photoimageable layer of a substrate in order to facilitate pattern transfer. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement.

Abstract: A photolithographic mask for receiving light at a wavelength, phase, and intensity and printing a desired image on a substrate with an optical system. The mask is formed on an optically transmissive substrate, called a mask blank. The mask blank is preferably one hundred percent transmissive of the light intensity at the wavelength. At least one layer of an attenuated material that is at least partially transmissive to the wavelength of the light is formed on the optically transmissive substrate. The at least one layer of the attenuated material preferably blocks from about fifty percent to about ninety-four percent of the intensity of the light at the wavelength, whereas the prior art masks use materials that block about six percent of the intensity of the light at the wavelength. The attenuated material defines three feature types on the mask, including a primary image having edges, a scattering bar disposed near the edges of the primary image, and a background region.

Abstract: A photolithographic mask for receiving light at a wavelength, phase, and intensity and printing a desired image on a substrate with an optical system. The mask is formed on an optically transmissive substrate, called a mask blank. The mask blank is preferably one hundred percent transmissive of the light intensity at the wavelength. At least one layer of an attenuated material that is at least partially transmissive to the wavelength of the light is formed on the optically transmissive substrate. The at least one layer of the attenuated material preferably blocks from about fifty percent to about ninety-four percent of the intensity of the light at the wavelength, whereas the prior art masks use materials that block about six percent of the intensity of the light at the wavelength. The attenuated material defines three feature types on the mask, including a primary image having edges, a scattering bar disposed near the edges of the primary image, and a background region.