Abstract: A method and system for backing up data is provided. The method includes storing a first plurality of data units in a backup storage, as a result of a fingerprint database being available, the first plurality of data units being deduplicated through application of the fingerprint database. The method includes storing a second plurality of data units in the backup storage, as a result of the fingerprint database being unavailable, wherein at least one step of the method is executed through a processor.

Abstract: A method for backing up data is provided. The method includes deduplicating a first plurality of data units during a backup operation through application of a first deduplication service and a fingerprint database. The method includes logging a second plurality of data units in a journal, during the backup operation. The logging is in response to a failure of the first deduplication service and wherein at least one method operation is executed through a processor.

Abstract: A computer-implemented method for managing references in deduplicating data systems may include (1) identifying a first instance of a data segment stored within a deduplicating data system that reduces redundant data storage by storing at least two data objects such that each of the two data objects references the first instance of the data segment, (2) identifying an additional data object to be stored by the deduplicating data system that includes the data segment, (3) determining whether a reference limit associated with the first instance of the data segment has been reached, and (4) storing, based at least in part on determining that the reference limit associated with the first instance of the data segment has been reached, a second instance of the data segment within the deduplicating data system. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

Abstract: Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).