Patents by Inventor Neena Avinash GILDA

Neena Avinash GILDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for manufacturing semiconductor device
    Patent number: 11062903
    Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: July 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Neena Avinash Gilda, Lien-Yao Tsai, Baohua Niu
  • Method and apparatus for manufacturing semiconductor device
    Patent number: 10777733
    Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Neena Avinash Gilda, Lien-Yao Tsai, Baohua Niu
  • METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200168789
    Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 28, 2020
    Inventors: NEENA AVINASH GILDA, LIEN-YAO TSAI, BAOHUA NIU
  • METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200135446
    Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.
    Type: Application
    Filed: October 26, 2018
    Publication date: April 30, 2020
    Inventors: Neena Avinash GILDA, Lien-Yao TSAI, Baohua NIU