Abstract: An adjustable and maneuverable taxidermy stand may include a base assembly; a lower hinge assembly adjustably attached to the base assembly; an upper hinge assembly pivotally attached to the lower hinge assembly; a hub assembly adjustably attached to the upper hinge assembly; and at least one mounting plate assembly adjustably attached to the hub assembly. Each assembly may be attached to an adjacent assembly using a shaft collar subassembly. Each shaft collar subassembly may include a threaded collar half removably attached to a non-threaded collar half; and a fastener attaching the threaded collar half to the non-threaded collar half, wherein when the threaded collar half is attached to the non-threaded collar half an inner diameter of the shaft collar subassembly is sized to accommodate a shaft tubing from any of the various assemblies.

Abstract: A pressure relief valve for use with flexible containers is disclosed. The valve comprises a valve chamber, a valve chamber seat with an inlet gas port or ports to the interior of the container and a resilient diaphragm floating within the chamber. The valve seat is shaped with a generally flat diaphragm-engaging surface in a central area of the diaphragm where the inlet gas port(s) are located, and at least one surface that does not generally engage the outer portion of the diaphragm, such that a diaphragm floating in the valve chamber engages a central portion of the valve seat surface stopping the passage of gases in or out of the container before a certain pressure is reached, but permitting the passage of gases from within the flexible container as pressure builds, while preventing the flow of atmospheric gases into the container.

Abstract: A degassing valve in a flexible container is disclosed. The valve includes a generally flat valve seat on a truncated generally dome shaped structure, and the valve seat is raised a height above the valve chamber base surface. A resilient, non-perforated, non-spring-biased diaphragm is inter-engaged upon the valve seat and overlaps the valve seat outer periphery. The valve seat engages a central area of the diaphragm that is not proximate the perimeter of the diaphragm, and the dome shaped structure has a sectional radius greater than the diaphragm radius. A well is recessed into the valve seat in a direction away from the diaphragm by a depth less than the height of the valve seat above the valve chamber base surface.

Abstract: A degassing valve in a flexible container is disclosed. The valve includes a generally flat valve seat on a truncated generally dome shaped structure, and the valve seat is raised a height above the valve chamber base surface. A resilient, non-perforated, non-spring-biased diaphragm is inter-engaged upon the valve seat and overlaps the valve seat outer periphery. The valve seat engages a central area of the diaphragm that is not proximate the perimeter of the diaphragm, and the dome shaped structure has a sectional radius greater than the diaphragm radius. A well is recessed into the valve seat in a direction away from the diaphragm by a depth less than the height of the valve seat above the valve chamber base surface.

Abstract: A system or method for automatic telephone notification using Voice over Internet Protocol (VoIP) includes a data portal having a web interface or portal software to connect to a master server. The data portal accesses a client's database and generates a customer list that includes customer records. A master server receives recorded messages from a remote location through an Interactive Voice Response (IVR). The master server also communicates instructions for placing alert message telephone calls to customers on the list. A call server array has multiple servers in communication with the master server and a VoIP network. The call server array receives instructions from the master server, and places alert message telephone calls according to the instructions communicated from the master server. The server array broadcasts calls over a VoIP network to customers.

Abstract: A pressure relief valve for use with flexible containers is disclosed. The valve comprises a valve chamber, a valve chamber seat with an inlet gas port or ports to the interior of the container and a resilient diaphragm floating within the chamber. The valve seat is shaped with a generally flat diaphragm-engaging surface in a central area of the diaphragm where the inlet gas port(s) are located, and at least one surface that does not generally engage the outer portion of the diaphragm, such that a diaphragm floating in the valve chamber engages a central portion of the valve seat surface stopping the passage of gases in or out of the container before a certain pressure is reached, but permitting the passage of gases from within the flexible container as pressure builds, while preventing the flow of atmospheric gases into the container.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Abstract: A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a substantially oxygen free, high-resistivity epitaxial layer, with a thickness of at least 50 &mgr;m, upon the surface of the silicon wafer. The silicon wafer substrate may then, optionally, be removed from the epitaxial layer.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a substantially oxygen free, high-resistivity epitaxial layer, with a thickness of at least 50 &mgr;m, upon the surface of the silicon wafer. The silicon wafer substrate may then, optionally, be removed from the epitaxial layer.

Abstract: A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.

Abstract: A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm or more, and an initial interstitial oxygen concentration of 10 to 40 ppma, b) processing the ingot into a wafer, c) determining the total amount of heat treatment required to reduce the interstitial oxygen content of the wafer to about 8 ppma or less, d) determining the amount of heat treatment which will take place during the device fabrication process after wafer fabrication, e) subjecting the wafer to a partial oxygen precipitation heat treatment equivalent to the total amount of heat treatment, less the amount of heat treatment that will occur during device fabrication.

Abstract: An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.