Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract: An ion implementation system includes an ion source chamber having a textured surfaced to reduce surface film delamination on the interior walls of the ion source chamber. The residual stresses originated from the thermal expansion mismatch due to temperature changes and the tensile residual stress between film and the substrate (liners). The textured feature alters the width to thickness ratio so that it will peel off when it reaches its fracture tensile stress. The machine textures surface increases the mechanical interlocking of the film that builds up on the surface of the ion source chamber, which delays delamination and reduces the size of the resulting flake thereby reducing the likelihood that the flake will bridge a biased component to a ground reference surface and correspondingly increases the life of the ion source.

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.