Abstract: A chemical vapor deposition (CVD) process for producing diamond includes providing a CVD Growth Chamber containing a growth substrate, charging the CVD growth chamber with a source gas mixture that includes a carbon source gas, activating the gas mixture to facilitate growth of diamond on the growth substrate, and providing for a period of diamond growth in a static mode during which the gas mixture is sealed within the CVD growth chamber.

Abstract: A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.

Abstract: Described herein is a chemical vapor deposition (CVD) process for producing diamond, the process comprising: providing a CVD growth chamber containing a growth substrate; charging the CVD growth chamber with a gas mixture, the gas mixture comprising a carbon source gas; activating the gas mixture to facilitate growth of diamond on the growth substrate; and providing for a period of diamond growth during which the gas mixture is sealed within the CVD growth chamber.

Abstract: A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.

Abstract: Provided herein is a radiation powered device comprising a semiconductor comprising a diamond material.

Abstract: Provided herein is a radiation powered device comprising a semiconductor comprising a diamond material.

Abstract: A surface with a low work function is formed from a starting material of diamond or diamond-like carbon. An oxygenation treatment is performed, so that the surface of the diamond or diamond-like carbon is oxygenated. Lithium is then deposited onto the oxygenated surface by means of a physical vapour deposition process. Excess lithium is then removed to form a lithium monolayer.

Abstract: A surface with a low work function is formed from a starting material of diamond or diamond-like carbon. An oxygenation treatment is performed, so that the surface of the diamond or diamond-like carbon is oxygenated. Lithium is then deposited onto the oxygenated surface by means of a physical vapour deposition process. Excess lithium is then removed to form a lithium monolayer.

Abstract: An electron emitter including a high work function metal 18 encapsulating a metal-doped, nanocrystalline diamond particle layer 14 in contact with a planar surface of a low workfunction metal cathode 12, and a method of fabrication of the same is disclosed. The method may include formulating the conductive nanodiamond powder with a metallic solution, containing the high workfunction metal, and disposing it on the metal cathode 12 to form a composite material layer containing surface areas exhibiting low electron affinity. The resulting cold cathode structure has a low extraction field needed for efficient emission, a means to limit the emission current per unit area, and a reduced emission sensitivity to surface adsorption/desorption effects.