Abstract: An ultra-efficient multilobal cross-sectioned fiber filter for chemical contaminant filtering applications is described. An absorptive chemically reactive reagent, preferably an acid or base and in liquid or an adsorptive chemically reactive reagent (an acid or base) in solid form, is disposed within longitudinal slots in each length of fiber. The reagent may be used alone or in conjunction with solid adsorptive particles which may also be utilized with the reagents in the longitudinal slots within the fibers. Reagents within the fibers remain exposed to a base-contaminated airstream passing through the filter. Base contaminants in the airstream, chemicals such as ammonium and amines (as well as particles), react with the acid reagent within the longitudinal slots of the fibers. As the contaminant and reagent react, the ammonium or amine becomes irreversibly absorbed (or adsorbed if reagent is a solid acid) to the liquid acid reagent and multilobal fiber.

Abstract: Precursor compositions for the CVD formation of low k dielectric films on a substrate, e.g., as an interlayer dielectric for fabrication of microelectronic device structures. The precursor composition includes a gaseous mixture of (i) at least one aromatic compound, (ii) an inert carrier medium and (iii) optionally at least one unsaturated constituent that is ethylenically and/or acetylenically unsaturated The unsaturated constituent can include either (a) a compound containing ethylenic unsaturation and/or acetylenic unsaturation, or (b) an ethylenically unsaturated and/or acetylenically unsaturated moiety of the aromatic compound (i) of the precursor composition. The low k dielectric film material may be usefully employed in integrated circuitry utilizing copper metallization, to achieve low RC time constants and superior microelectronic device performance.

Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Abstract: An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.

Abstract: Precursor compositions for the CVD formation of low k dielectric films on a substrate, e.g., as an interlayer dielectric material for fabrication of microelectronic device structures. The precursor composition includes a gaseous mixture of (i) at least one aromatic compound, (ii) an inert carrier medium and (iii) optionally at least one unsaturated constituent that is ethylenically and/or acetylenically unsaturated. The unsaturated constituent can include either (a) a compound containing ethylenic unsaturation and/or acetylenic unsaturation, or (b) an ethylenically unsaturated and/or acetylenically unsaturated moiety of the aromatic compound (i) of the precursor composition. The low k dielectric film material may be usefully employed in integrated circuitry utilizing copper metallization, to achieve low RC time constants and superior microelectronic device performance.

Abstract: An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.

Abstract: An ultra-efficient multilobal cross-sectioned fiber filter for chemical contaminant filtering applications is described. An absorptive chemically reactive reagent, preferably an acid or base and in liquid or an adsorptive chemically reactive reagent (an acid or base) in solid form, is disposed within longitudinal slots in each length of fiber. The reagent may be used alone or in conjunction with solid adsorptive particles which may also be utilized with the reagents in the longitudinal slots within the fibers. Reagents within the fibers remain exposed to a base-contaminated airstream passing through the filter. Base contaminants in the airstream, chemicals such as ammonium and amines (as well as particles), react with the acid reagent within the longitudinal slots of the fibers. As the contaminant and reagent react, the ammonium or amine becomes irreversibly absorbed (or adsorbed if reagent is a solid acid) to the liquid acid reagent and multilobal fiber.

Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Abstract: An ultra-efficient multilobal cross-sectioned fiber filter for chemical contaminant filtering applications is described. An absorptive chemically reactive reagent, preferably an acid or base and in liquid or an adsorptive chemically reactive reagent (an acid or base) in solid form, is disposed within longitudinal slots in each length of fiber. The reagent may be used alone or in conjunction with solid adsorptive particles which may also be utilized with the reagents in the longitudinal slots within the fibers. Reagents within the fibers remain exposed to a base-contaminated airstream passing through the filter. Base contaminants in the airstream, chemicals such as ammonium and amines (as well as particles), react with the acid reagent within the longitudinal slots of the fibers. As the contaminant and reagent react, the ammonium or amine becomes irreversibly absorbed (or adsorbed if reagent is a solid acid) to the liquid acid reagent and multilobal fiber.

Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Abstract: A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer.

Abstract: A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.

Abstract: Methods for preparing rigid-rod macromonomers having a polyaromatic backbone, solubilizing side groups, and reactive end groups are provided. Such methods include catalytic reductive coupling of substituted 1,4-dihaloaromatic compounds in the presence of an endcapping moiety.

Abstract: Rigid-rod macromonomers, and methods for preparing such macromonomers, having a polyaromatic backbone, solubilizing side groups, and reactive side groups are provided. The macromonomers are chemically incorporated into polymer systems to provide stronger, stiffened polymers.

Abstract: Rigid-rod macromonomers, and methods for preparing such macromonomers, having a polyaromatic backbone, solubilizing side groups, and reactive side groups are provided. The macromonomers are chemically incorporated into polymer systems to provide stronger, stiffened polymers.

Abstract: A soluble rigid-rod macromonomer is provided which has the following formula: ##STR1## wherein each A.sub.1, A.sub.2, A.sub.3, and A.sub.4, on each monomer unit, independently, is C or N, and each G.sub.1, G.sub.2, G.sub.3, and G.sub.4, on each monomer unit, independently, is H or a solubilizing side group, provided that at least one monomer unit has at least one solubilizing side group. The solubilizing side groups provide the macromonomers with a solubility of at least 0.5% by weight in the solvent system from which they are formed. E is a reactive end group, and the macromonomer has an average degree of polymerization, DP.sub.n, greater than 6. Such macromonomers are chemically incorporated into polymer systems to provide stronger stiffened polymers.

Abstract: A soluble rigid-rod macromonomer is provided which has the following formula: ##STR1## wherein each G.sub.1, G.sub.2, G.sub.3, and G.sub.4, on each monomer unit, independently, is H or a solubilizing side group, provided that at least one monomer unit has at least one solubilizing side group. The solubilizing side groups provide the macromonomers with a solubility of at least 0.5% by weight in the solvent system from which they are formed. E is a reactive end group, and the macromonomer has an average degree of polymerization, DP.sub.n, greater than 6. Such macromonomers are chemically incorporated into polymer systems to provide stronger stiffened polymers.

Abstract: Rigid-rod macromonomers, and methods for preparing such macromonomers, having a polyaromatic backbone, solubilizing side groups, and reactive end groups are provided. The macromonomers are chemically incorporated into polymer systems to provide stronger, stiffened polymers.

Abstract: Rigid-rod macromonomers, and methods for preparing such macromonomers, having a polyaromatic backbone, solubilizing side groups, and reactive side groups are provided. The macromonomers are chemically incorporated into polymer systems to provide stronger, stiffened polymers.

Abstract: Rigid-rod macromonomers, and methods for preparing such macromonomers, having a polyaromatic backbone, solubilizing side groups, and reactive side groups are provided. The macromonomers are chemically incorporated into polymer systems to provide stronger, stiffened polymers.