Abstract: One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.

Abstract: In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.

Abstract: A data buffering unit includes a memory that stores data from a data transmitting device. The data buffering unit also includes a memory read manager that prepares data stored in the memory for output prior to receiving a request for the data from a data reading device.

Abstract: A semiconductor structure is described, which includes a semiconductor substrate of one conductivity type, having a front surface and a back surface. A first amorphous semiconductor layer is applied on the front surface; and second and third amorphous semiconductor layers are disposed on portions of the back surface of the substrate. The second and third layers are each compositionally graded through their depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at their opposite surfaces. In some instances, the first semiconductor layer is also compositionally graded, while in other instances, it is intrinsic in character. The semiconductor structures can function as solar cells; and modules which include a number of such cells represent another embodiment of the invention. Methods for making a photovoltaic device are also described.

Abstract: A system and method for remotely monitoring and servicing user's print system including the ability to diagnose a problem with a user's print system based on properties monitored from such system and creating a query that predicts the source of the problem based on past history for this print system and other user's print systems.

Abstract: The present invention is directed to an IR transmissive coating comprised of deuterated amorphous carbon (a-C:D).

Abstract: This invention relates to the newly identified compounds for inhibiting hYAK3 proteins and methods for treating diseases associated with the imbalance or inappropriate activity of hYAK3 proteins.

Abstract: A method of forming a hydrogenated amorphous germanium carbon (?-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (?-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.

Abstract: A solar cell array includes a series of photovoltaic cells having a front side and a back side. Each photovoltaic cell also includes front contacts and back contacts disposed on the front side and back side of each cell respectively, wherein the front contacts and the back contacts are accessible from the back side of each cell. The solar cell array also includes multiple tabs electrically coupled to the front contacts and configured to provide electrical paths from the front contacts to the back side of each photovoltaic cell. Further, the photovoltaic cells are interconnected by multiple interconnect leads that are coupled from a tab on the back side of a first photovoltaic cell to a back contact point on the back side of a second photovoltaic cell. An automated method of interconnecting the photovoltaic cells in the solar cell array is also disclosed.

Abstract: In a tape drive apparatus commonly shared by a plurality of host devices coupled to the tape drive apparatus over a host port, access control is provided. Each host device is identified by a host address. The tape drive apparatus comprises a data transfer unit for transferring data between a loaded tape medium and the tape drive apparatus. A command for registering a host address of one of the plurality of host devices in the tape drive apparatus for the purpose of authorising access is received over a management port. A command comprising data to be stored on the tape medium is received from a requesting host device over the host port. The host address of the requesting host device is derived from the command received over the host port. The host address of the requesting host device is verified against the host address registered in the tape drive apparatus to determine whether or not the requesting host device has access authorisation.

Abstract: A photovoltaic roofing system and a method of installing the photovoltaic ridge cap structure have been provided. The photovoltaic roofing system includes a ridge cap adapted to cover a ridge of a roof structure. The system also includes at least one photovoltaic cell disposed within the ridge cap. The method of installing a photovoltaic ridge cap structure includes mounting the ridge cap over multiple photovoltaic cells along a ridge of a roof structure. The method further includes routing electrical leads from each photovoltaic cell through one or more openings along the ridge of the roof structure.

Abstract: The present invention is directed to novel compounds of Formula (I) for use in the treatment of diseases, in a mammal, in which inappropriate, excessive or undesirable angiogenesis has occurred and/or where excessive Tie2 receptor activity has occurred.

Abstract: A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate.

Abstract: A structural building component for a residential or light commercial building includes a PV laminate and a plastic frame disposed at least around the PV laminate. The plastic frame includes a first electrical connector for communication with the PV laminate and receptive to electrical connection with a contiguous PV laminate. The first electrical connector is configured to facilitate electrical and mechanical connection with the contiguous PV laminate and the frame includes a means for facilitating attachment to the building structure.

Abstract: Benzimidazole derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such benzimidazole derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.

Abstract: A method of fabricating a wash basket for a washing machine including providing a substantially cylindrical housing having a bottom and an inner wall, providing a plurality of geometric structures and connecting the plurality of geometric structures to the inner wall. The plurality of geometric structures may be configured to optimize a relationship between mechanically agitating an article contained within the wash basket during a wash cycle and reducing a residual moisture content of the article during a spin cycle. A wash basket for a washing machine may include a housing having an inner wall fabricated by a first process and a plurality of geometric structures fabricated by a second process where the plurality of geometric structures are attached to and extend radially inwardly from the inner wall, the geometric structures comprising a separate structure relative to the housing.

Abstract: Chemical vapor deposition is performed using a plurality of expanding thermal plasma generating means to produce a coating on a substrate, such as a thermoplastic and especially a polycarbonate substrate. The substrate is preferably moved past the generating means. Included are methods which coat both sides of the substrate or which employ multiple sets of generating means, either in a single deposition chamber or in a plurality of chambers for deposition of successive coatings. The substrate surfaces spaced from the axes of the generating means are preferably heated to promote coating uniformity.

Abstract: An integrated network interface device that supports data exchange in two or more high-speed network data transfer protocols that are based on different standards of network data transfer architectures, wherein an incoming data stream formatted in accordance with a particular network data transfer standard is processed into data not subject to the network data transfer standard to be output for further processing by a host. In one aspect, a network interface device is provided with a set of shared or common protocol independent physical link components that are used to identify the operating protocol of the incoming data, and a set of dynamically or statically re-configurable, shared or common protocol independent data transfer processing components that support data exchange via the physical link components for all the supported protocols, which may include a protocol specific link interface for each supported protocol.

Abstract: A method of forming a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.