Patents by Inventor Neil Joseph Greeley

Neil Joseph Greeley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of removing particles from over semiconductor substrates
    Patent number: 8940102
    Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: January 27, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Neil Joseph Greeley, Dan Millward, Wayne Huang
  • Methods Of Removing Particles From Over Semiconductor Substrates
    Publication number: 20120266913
    Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.
    Type: Application
    Filed: June 27, 2012
    Publication date: October 25, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Neil Joseph Greeley, Dan Millward, Wayne Huang
  • Methods of removing particles from over semiconductor substrates
    Patent number: 8226772
    Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: July 24, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Neil Joseph Greeley, Dan Millward, Wayne Huang
  • Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
    Patent number: 8183157
    Abstract: Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: May 22, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Naraji B Rana, Nishant Sinha, Prashant Raghu, Jim J. Hofmann, Neil Joseph Greeley
  • Methods of utilizing silicon dioxide-containing masking structures
    Patent number: 8026148
    Abstract: Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: September 27, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Niraj B. Rana, Nishant Sinha, Prashant Raghu, Jim J. Hofmann, Neil Joseph Greeley
  • Methods of Removing Particles From Over Semiconductor Substrates
    Publication number: 20100170531
    Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.
    Type: Application
    Filed: January 8, 2009
    Publication date: July 8, 2010
    Inventors: Neil Joseph Greeley, Dan Millward, Wayne Huang