Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A solar cell includes a first electrode located over a substrate, at least one first conductivity type semiconductor layer located over the first electrode, at least one second conductivity type semiconductor layer located over the first conductivity semiconductor layer, and a transparent conductive oxide contact layer located over the second conductivity semiconductor layer. The first surface of the transparent conductive oxide contact layer may be located closer to the second conductivity type semiconductor layer than the second surface of the transparent conductive oxide contact layer, and the transparent conductive oxide contact layer may have an oxygen concentration that decreases continuously or in at least two discrete steps as a function of thickness for at least a first portion of the contact layer thickness in a direction from the first surface to the second surface.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.

Abstract: A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the processing chamber. In another embodiment, a coaxial inject/exhaust assembly enables activated species to be introduced into the processing chamber via an inner tube and gases to be exhausted from the processing chamber via an outer tube. Other embodiments incorporate an compound valve in the delivery system for selectively isolating the RPC chamber from the processing chamber and an optical baffle for protecting sensitive components of the isolation valve from exposure to ion bombardment and plasma radiation.

Abstract: At least one wafer is exposed to a treatment environment in a treatment chamber at a treatment pressure. The backside of the wafer is exposed to a heat transfer gas for thermally coupling the wafer to the support arrangement. Control of the heat transfer gas provides a fixed flow to the support arrangement enabling thermal coupling with the support arrangement. A first portion of the heat transfer gas leaks between the support arrangement and the wafer. Responsive to a backside pressure signal, a second portion of the fixed flow is released in a way which maintains the backside pressure at a selected value. In one feature, effluent flow control is used for controllably releasing the second portion of heat transfer gas. In another feature, the second portion of heat transfer gas is released into the treatment chamber. Dilution control and multi-wafer configurations are described.

Abstract: A remote plasma cleaning system includes a high conductance delivery line that delivers activated species from a remote plasma generator to a processing chamber. The delivery line preferably has a conductance of greater than 40 liters per second, enabling the power levels of the remote plasma generator to be maintained at less than about 3 kW. In one embodiment, activated species may be introduced into the processing chamber via one or more inlet ports disposed in a side portion of the processing chamber. In another embodiment, a coaxial inject/exhaust assembly enables activated species to be introduced into the processing chamber via an inner tube and gases to be exhausted from the processing chamber via an outer tube. Other embodiments incorporate an compound valve in the delivery system for selectively isolating the RPC chamber from the processing chamber and an optical baffle for protecting sensitive components of the isolation valve from exposure to ion bombardment and plasma radiation.