Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.

Abstract: A substrate processing system includes a processing chamber including a window. A substrate support is arranged inside the processing chamber to support a substrate during plasma processing. A first array including E inductive coils arranged adjacent to and outside of the processing chamber, where E is an integer greater than three. A second array includes D RF direct drive circuits configured to output RF power to the first array, where D is an integer greater than three, and to generate plasma inside of the processing chamber.

Abstract: An apparatus for a transformer isolator used for transferring power to an element of a substrate support used in a plasma chamber is provided. A primary of the transformer isolator includes a primary base plate configured to electrically couple to ground. A primary ferrite disposed over the primary base plate, and the primary ferrite has a primary circular channel. A primary coil is wound within the primary circular channel. A primary shield is disposed over the primary ferrite and the primary coil. The primary shield includes a first plurality of radial segments that extend from a primary center region to outside a periphery of the primary ferrite. An extended region of the primary shield has a curved section to connect the primary shield with the primary base plate. In one example, the secondary of the transformer isolator has similar construction as the primary and are used together as part of the transformer isolator.

Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Abstract: RF isolation for power circuitry includes one or more ferrite cages surrounding a pair of coils, one coil connected to power input, and the other coil connected to a load such as a heater. The ferrite cage provides universal isolation for the coils, avoiding the necessity of specially tuned filters or more complicated coil arrangements. A pair of dielectric discs support respective coils. In one aspect, the ferrite cage is constituted by ferrite pieces which fan out from a central portion of the dielectric discs and are connected at an outer periphery of the dielectric discs, and at the central portion of the dielectric discs. In one aspect, the fanned-out ferrite pieces comprises either manganese-zinc or magnesium-zinc ferrites, and the ferrite pieces connecting the fanned-out ferrite pieces comprise nickel-zinc ferrites.

Abstract: RF isolation for power circuitry includes one or more ferrite cages surrounding a pair of coils, one coil connected to power input, and the other coil connected to a load such as a heater. The ferrite cage provides universal isolation for the coils, avoiding the necessity of specially tuned filters or more complicated coil arrangements. A pair of dielectric discs support respective coils. In one aspect, the ferrite cage is constituted by ferrite pieces which fan out from a central portion of the dielectric discs and are connected at an outer periphery of the dielectric discs, and at the central portion of the dielectric discs. In one aspect, the fanned-out ferrite pieces comprises either manganese-zinc or magnesium-zinc ferrites, and the ferrite pieces connecting the fanned-out ferrite pieces comprise nickel-zinc ferrites.

Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.

Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.