Abstract: A method for performing workflow comparisons for determining data migration readiness is provided. The method includes initiating a comparison run for a batch file, and splitting the batch file into multiple component workflows. Each of the component workflows are then scheduled for processing across multiple processing stages. When a component workflow is determined to have completed all of the processing stages: compute a difference between a baseline and a target system for the component workflow, and cross reference the difference generated with prestored rules as well as machine learning techniques to determine whether the difference can be ignored (e.g., excluded) or explained (e.g., already encompassed in the book of work). When all of the component workflows originating from the batch file passes, merging reports for all of the component workflows for generating a merged report.

Abstract: This invention relates to an electrode comprising (a) as an anion, a halide of either bismuth or antimony, wherein the halide is bromide or iodide, and (b) a cation. The invention also relates to a sodium ion or lithium ion battery comprising the electrode, and a laptop, mobile phone, electric vehicle or grid storage system comprising the sodium ion or lithium ion battery. In addition, the invention relates to a method of making the electrode comprising the steps of: (a) preparing a first solution comprising a halide of either bismuth or antimony, wherein the halide is bromide or iodide, (b) preparing a second solution comprising a cation, (c) mixing the first and second solutions, and (d) drying the resulting product.

Abstract: In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM memory cell, is connected in series with a threshold switching selector, such as an ovonic threshold switch. The threshold switching selector switches to a conducting state when a voltage above a threshold voltage is applied. When powered down for extended periods, the threshold voltage can drift upward. If the drift is excessive, this can make the memory cell difficult to access and can disturb stored data values when accessed. Techniques are presented to determine whether excessive voltage threshold drift may have occurred, including a read based test and a time based test.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A method for performing workflow comparisons for determining data migration readiness is provided. The method includes initiating a comparison run for a batch file, and splitting the batch file into multiple component workflows. Each of the component workflows are then scheduled for processing across multiple processing stages. When a component workflow is determined to have completed all of the processing stages: compute a difference between a baseline and a target system for the component workflow, and cross reference the difference generated with prestored rules as well as machine learning techniques to determine whether the difference can be ignored (e.g., excluded) or explained (e.g., already encompassed in the book of work). When all of the component workflows originating from the batch file passes, merging reports for all of the component workflows for generating a merged report.

Abstract: A floor assembly for a trailer includes a pair of longitudinally extending main beams, each having a first height dimension along a first longitudinal portion of the main beam and a second height dimension along a second portion of the main beam. The first height dimension being greater than the second height dimension. Cross members extend in a transverse direction between and connect the main beams. A plurality of floor members extend transversely between the main beams. The floor members including at least some reinforced floor members. The reinforced floor members have upper and lower walls and opposing side walls that define a rectangular cross-section and include a series of truss walls extending angularly between the upper and lower walls. The reinforced floor members are positioned on the upper surfaces of the main beams at least in part at the second height dimension.

Abstract: In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM memory cell, is connected in series with a threshold switching selector, such as an ovonic threshold switch. The threshold switching selector switches to a conducting state when a voltage above a threshold voltage is applied. When powered down for extended periods, the threshold voltage can drift upward. If the drift is excessive, this can make the memory cell difficult to access and can disturb stored data values when accessed. Techniques are presented to determine whether excessive voltage threshold drift may have occurred, including a read based test and a time based test.

Abstract: In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM memory cell, is connected in series with a threshold switching selector, such as an ovonic threshold switch. The threshold switching selector switches to a conducting state when a voltage above a threshold voltage is applied. When powered down for extended periods, the threshold voltage can drift upward. If the drift is excessive, this can make the memory cell difficult to access and can disturb stored data values when accessed. Techniques are presented to determine whether excessive voltage threshold drift may have occurred, including a read based test and a time based test.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM memory cell, is connected in series with a threshold switching selector, such as an ovonic threshold switch. The threshold switching selector switches to a conducting state when a voltage above a threshold voltage is applied. When powered down for extended periods, the threshold voltage can drift upward. If the drift is excessive, this can make the memory cell difficult to access and can disturb stored data values when accessed. Techniques are presented to determine whether excessive voltage threshold drift may have occurred, including a read based test and a time based test.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A floor assembly for a trailer includes a pair of longitudinally extending main beams, each having a first height dimension along a first longitudinal portion of the main beam and a second height dimension along a second portion of the main beam. The first height dimension being greater than the second height dimension. Cross members extend in a transverse direction between and connect the main beams. A plurality of floor members extend transversely between the main beams. The floor members including at least some reinforced floor members. The reinforced floor members have upper and lower walls and opposing side walls that define a rectangular cross-section and include a series of truss walls extending angularly between the upper and lower walls. The reinforced floor members are positioned on the upper surfaces of the main beams at least in part at the second height dimension.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A memory cell includes a VCMA magnetoelectric memory element and a two-terminal selector element connected in series to the magnetoelectric memory element.

Abstract: A memory cell includes a VCMA magnetoelectric memory element and a two-terminal selector element connected in series to the magnetoelectric memory element.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A plurality of read lines are in a read line layer, and a plurality of write lines are in a write line layer. A plurality of spin accumulation lines are in a spin accumulation line layer disposed between a read line layer and a write line layer. Spin accumulation lines may horizontally cross read lines and write lines. A plurality of vertical magnetoresistive random access memory (MRAM) cells may include polarizers and magnetic tunnel junctions. A vertical MRAM cell may include a polarizer coupled between a spin accumulation line and a write line. A vertical MRAM cell may further include a magnetic tunnel junction coupled between a spin accumulation line and a read line, such that the magnetic tunnel junction and the polarizer are vertically aligned.

Abstract: An upstream signal capture device includes a signal capture circuit having a first port and a second port. The first port of the signal capture circuit is arranged for coupling to a diplexer. The upstream signal capture device also includes an amplifier having a first port and a second port, the first port of the amplifier coupled to the second port of the signal capture circuit, and an analog-to-digital converter (ADC) having a first port and a second port, the first port of the ADC coupled to the second port of the amplifier. The upstream signal capture device further includes a digital threshold detector having an input and output, the input of the digital threshold detector coupled to the second port of the analog-to-digital converter, and a memory configured to capture samples of the upstream signal. When using the upstream signal capture device to capture an upstream signal, a portion of an upstream signal is diverted into an analog-to-digital converter (ADC).

Abstract: An upstream signal capture device includes a signal capture circuit having a first port and a second port. The first port of the signal capture circuit is arranged for coupling to a diplexer. The upstream signal capture device also includes an amplifier having a first port and a second port, the first port of the amplifier coupled to the second port of the signal capture circuit, and an analog-to-digital converter (ADC) having a first port and a second port, the first port of the ADC coupled to the second port of the amplifier. The upstream signal capture device further includes a digital threshold detector having an input and output, the input of the digital threshold detector coupled to the second port of the analog-to-digital converter, and a memory configured to capture samples of the upstream signal. When using the upstream signal capture device to capture an upstream signal, a portion of an upstream signal is diverted into an analog-to-digital converter (ADC).

Abstract: A granular chemical dispenser (1) is provided, comprising a conduit (2) providing an open ended liquid flow passage, and subsidiary inlet (21) and outlet (3) openings to and from the conduit spaced apart along its length. The dispenser includes means for introducing an area (22) of low pressure at the subsidiary inlet, with the subsidiary outlet opening into a vented chamber connected to a mixing chamber (9) having a dosing compartment (15) opening into the top of the mixing chamber. The dispenser further includes ganged valves (13,14) for controlling an inlet (25) and an outlet (12) to and from the compartment, with the mixing chamber having an outlet (19) connected to the conduit subsidiary inlet. Means for operating the ganged valves on liquid flow through the passage and reversing this operation on the cessation of flow through the passage is further provided.

Abstract: Systems and methods are disclosed for providing television services and/or presentations to a plurality of televisions located at a customer premises. One such method, among others, includes: receiving by a set-top terminal (STT) located at a customer premises, via a transmission link that is coupled to the STT, a television service that was transmitted from a remote location, and transmitting the television service by the STT, via the transmission link, to a television that is located at the customer premises.