Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: The present invention describes a method including providing a substrate; forming a photoresist on the substrate; performing a post-apply bake on the photoresist; exposing the photoresist to actinic radiation; performing a post-exposure bake on the photoresist; developing the photoresist; and performing electron exposure on the photoresist to reduce line edge roughness.

Abstract: A source of soft x-rays in an Extreme Ultraviolet (EUV) lithography system may include a pre-ionization unit to pre-ionize a source material, e.g., a Xenon plasma. The pre-ionization unit may be integrated with a discharge unit, and may use Lanthanum Hexaboride (LaB6) as a thermionic emitter material.

Abstract: A source of soft x-rays in an Extreme Ultraviolet (EUV) lithography system may include a pre-ionization unit to pre-ionize a source material, e.g., a Xenon plasma. The pre-ionization unit may be integrated with a discharge unit, and may use Lanthanum Hexaboride (LaB6) as a thermionic emitter material.

Abstract: A photolithography tool includes an anode and a cathode composed of a first material and a second material. The second material has a lower work function than the first material. Electrons emitted from the cathode ionize a gas into a plasma that generates EUV light. The EUV light is focused on a mask to produce an image of a circuit pattern. The image is projected on a semiconductor wafer to produce a circuit.

Abstract: A photolithography tool includes an anode and a cathode composed of a first material and a second material. The second material has a lower work function than the first material. Electrons emitted from the cathode ionize a gas into a plasma that generates EUV light. The EUV light is focused on a mask to produce an image of a circuit pattern. The image is projected on a semiconductor wafer to produce a circuit.

Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: An improved method and apparatus for forming microlenses is described. The method involves defocusing light from a mask during semiconductor processing to control the curvature of microlenses being formed.

Abstract: A structure and method for producing color filters with a protective highly cross-linked and densified polymer layer is described. In one embodiment, each filter is coated with a highly cross-linked and densified polymer layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the highly cross-linked and densified polymer layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the highly cross-linked and densified polymer layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.

Abstract: An improved method and apparatus for forming microlenses is described. The method involves defocusing light from a mask during semiconductor processing to control the curvature of microlenses being formed.