Abstract: A method includes causing, by a computing system comprising at least one processing device, a diagnostic disc placed within a processing chamber to generate sensor data of at least one component of the processing chamber using a set of non-contact sensors of the diagnostic disc, receiving, by the computing system, the sensor data from the diagnostic disc via a wireless connection established between the computing system and the diagnostic disc, determining, by the computing system based on the sensor data, whether at least one of alignment concentricity is skewed with respect to the at least one component, and in response to determining that at least one of alignment or concentricity is skewed with respect to the at least one component, initiating, by the computing system, correction of at least one of alignment or concentricity of the at least one component.

Abstract: An integrated circuit is provided that includes memory elements that exhibit immunity to soft error upset (SEU) events when subjected to high-energy atomic particle strikes. Each memory element may include at least two inverting circuits coupled in a feedback loop. Transistors in the memory element may be grouped in one contiguous region or divided into multiple separate regions. The memory element may include a long gate conductor that extends outside the boundary of the one contiguous region or the multiple separated regions. The long gate conductor may serve to provide parasitic resistance in the feedback loop to help mitigate SEU disturbances.

Abstract: An integrated circuit is provided that includes memory elements that exhibit immunity to soft error upset (SEU) events when subjected to high-energy atomic particle strikes. Each memory element may include at least two inverting circuits coupled in a feedback loop. Transistors in the memory element may be grouped in one contiguous region or divided into multiple separate regions. The memory element may include a long gate conductor that extends outside the boundary of the one contiguous region or the multiple separated regions. The long gate conductor may serve to provide parasitic resistance in the feedback loop to help mitigate SEU disturbances.

Abstract: Integrated circuits having flip-flops with asynchronous reset capabilities are provided. The flip-flops may be single event upset (SEU) hardened registers implemented using dual-interlocked cell (DICE) latch circuits. A logic gate may be inserted at the data input of each flip-flop. A multiplexer may be inserted at the input of the clock tree that is being used to feed clock signals to each of the flip-flops. Both the logic gate and the multiplexer may receive an asynchronous reset signal. The multiplexer may also receive a normal clock signal and a delayed clock pulse signal that is triggered in response to detecting assertion of the reset signal.

Abstract: An integrated circuit for detecting and correcting error events associated with atomic particles includes error detection circuitry connected to monitoring circuitry. The error detection circuitry may include a particle sensing circuit (e.g., a diode circuit) embedded below a substrate surface of the integrated circuit, and a particle validation circuit (e.g., a sense amplifier) coupled to the particle sensing circuit through a conductive via. The particle sensing circuit may detect and collect stray charges generated by an atomic particle passing through the integrated circuit. A particle validation circuit may generate an output signal that is indicative of the particle energy of the atomic particle based on the collected stray charge by the particle sensing circuit. Monitoring circuitry may identify the particle energy based on the output signal and subsequently generate an error correction signal, which activates error correction operations in the integrated circuit.

Abstract: Circuitry may include a substrate with an input and an output circuit coupled in series at an intermediate node. The output circuit may have an output transistor and a stack transistor coupled in series between an output node and a voltage supply terminal. The two circuits may be placed on the substrate such that a single event transient charge injected into a sensitive diffusion of the intermediate node is shared through the substrate with the sensitive diffusion of the stack transistor of the output circuit. The charge sharing may reduce the recovery time at the output node and help to reduce the recovery time at the intermediate node, thereby providing increased single event transient robustness and reducing the probability of a permanent flip of the intermediate node and the output node of the circuitry.