Patents by Inventor Nelson Loke Chou San

Nelson Loke Chou San has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming integrated dielectric layers
    Patent number: 6815332
    Abstract: A method for forming integrated dielectric layers using plasma energy includes (i) depositing a first dielectric layer on a substrate using a first reaction gas comprised of a source gas at a first source gas flow rate and an inert gas at a first inert gas flow rate, wherein the first inert gas flow rate is no more than 40% of the first source gas flow rate, and (ii) continuously depositing a second dielectric layer on top of the first dielectric layer using a second reaction gas comprised of a source gas at a second source gas flow rate and an inert gas at a second inert gas flow rate, wherein the second inert gas flow rate is 40% or higher of the second source gas flow rate.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: November 9, 2004
    Assignee: ASM Japan K.K.
    Inventors: Nelson Loke Chou San, Kiyoshi Satoh
  • Method of cleaning a CVD reaction chamber using an active oxygen species
    Patent number: 6767836
    Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: July 27, 2004
    Assignee: ASM Japan K.K.
    Inventors: Nelson Loke Chou San, Kenichi Kagami, Kiyoshi Satoh
  • Method for forming integrated dielectric layers
    Publication number: 20040087179
    Abstract: A method for forming integrated dielectric layers using plasma energy includes (i) depositing a first dielectric layer on a substrate using a first reaction gas comprised of a source gas at a first source gas flow rate and an inert gas at a first inert gas flow rate, wherein the first inert gas flow rate is no more than 40% of the first source gas flow rate, and (ii) continuously depositing a second dielectric layer on top of the first dielectric layer using a second reaction gas comprised of a source gas at a second source gas flow rate and an inert gas at a second inert gas flow rate, wherein the second inert gas flow rate is 40% or higher of the second source gas flow rate.
    Type: Application
    Filed: October 30, 2002
    Publication date: May 6, 2004
    Applicant: ASM JAPAN K.K.
    Inventors: Nelson Loke Chou San, Kiyoshi Satoh
  • Method of forming a film on a semiconductor substrate
    Publication number: 20040043626
    Abstract: Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.
    Type: Application
    Filed: September 4, 2002
    Publication date: March 4, 2004
    Inventors: Nelson Loke Chou San, Kenichi Kagami, Kiyoshi Satoh