Patents by Inventor Nena Liakopoulos

Nena Liakopoulos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers
    Patent number: 6413793
    Abstract: A semiconductor structure includes a substrate, a sacrificial layer formed on or over the substrate, and a structural layer formed on or over the sacrificial layer. At least one opening is formed in the structural layer. At least one opening is formed in the sacrificial layer below the at least one opening in the structural layer. The at least one opening in the structural layer and the at least one opening in the sacrificial layer are at least partially filled with a filler material. At least one portion of the structural layer is removed to define at least one microstructure. The sacrificial layer is removed such that the at least one microstructure is released from the substrate and the filler material forms one or more protrusions on the at least one microstructure, and/or one or more anchors anchoring the at least one microstructure to the substrate.
    Type: Grant
    Filed: May 17, 2001
    Date of Patent: July 2, 2002
    Assignee: Xerox Corporation
    Inventors: Chuang-Chia Lin, Peter M. Gulvin, Alex T. Tran, Nena Liakopoulos