Patents by Inventor Neng-hsing Lu

Neng-hsing Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5453148
    Abstract: An uniaxial adhesive for connecting a circuit member having a plurality of laterally spaced conductive terminals to a substrate including a mounting space having a plurality of laterally spaced conductive paths contains at least 10 percent by weight of compressible hollow conductive particles and a nonconductive polymeric resin. Magnetic field and pressure are applied to the adhesive to gather, concentrate and deform the hollow conductive particles between the conductive terminals and the conductive paths so as to assure excellent electrical connections therebetween.
    Type: Grant
    Filed: October 5, 1993
    Date of Patent: September 26, 1995
    Assignees: Industrial Technology Research Institute, United Microelectronics Corp.
    Inventors: Neng-Hsing Lu, Ning Yang, J. C. Deng, Dick Liao
  • Patent number: 5429701
    Abstract: A method of electrically interconnecting conductors, such as electrical components to a printed circuit board. A plurality of first and second conductors are provided which are discrete and at least one of which is made of soft magnetic material that can be temporarily magnetized. The plurality of first conductors are arranged in a predetermined arrangement on a surface of a substrate. An adhesive layer comprised of a mixture is disposed on the surface of the substrate and over the plurality of first conductors. The mixture is comprised of an adhesive and a predetermined concentration of conductive metal particles made of soft magnetic materials that can be temporarily magnetized. The adhesive has a predetermined viscosity which allows the conductive metal particles to be suspended within the adhesive. The mixture is substantially insulating at the predetermined concentration of conductive metal particles.
    Type: Grant
    Filed: April 21, 1994
    Date of Patent: July 4, 1995
    Assignee: Industrial Technology Research Institute
    Inventor: Neng-Hsing Lu
  • Patent number: 5061359
    Abstract: A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plurality of electrodes substantially parallel to each other and to substrates alternating therewith. Each of the electrodes is of a hollow configuration and includes a pair of flat sides, each side having a plurality of tapered apertures therein. A means for directing a reactive gas through the apertures toward the substrates is provided. A first bus structure electrically connects the substrates and may be grounded. A second bus structure electrically connects alternate ones of the electrodes and is connected to a first radio frequency power source. A third bus structure electrically connects the remaining ones of the electrodes and is connected to a second radio frequency power source adapted to operate 180 degrees out of phase with the first power source.
    Type: Grant
    Filed: January 22, 1990
    Date of Patent: October 29, 1991
    Assignee: International Business Machines Corporation
    Inventors: Suryadevara V. Babu, Neng-hsing Lu, Carl-Otto Nilsen
  • Patent number: 5021138
    Abstract: A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.
    Type: Grant
    Filed: September 18, 1989
    Date of Patent: June 4, 1991
    Inventors: Suryadevara V. Babu, Neng-hsing Lu, Carl-Otto Nilsen
  • Patent number: 4956197
    Abstract: A dielectric surface is conditioned for electroless plating of a conductive metal thereon by exposing the substrate to a gaseous plasma obtained from ammonia and/or an organic amine. The conditioning can be in the holes and/or on the surfaces of the substrate.
    Type: Grant
    Filed: September 30, 1988
    Date of Patent: September 11, 1990
    Assignee: International Business Machines Corporation
    Inventors: Suryadevara V. Babu, Neng-Hsing Lu, Gerald W. Jones
  • Patent number: 4820376
    Abstract: Disclosed is a method of fabricating conductive polymer interconnect (CPI) material which employs chains of electrically conductive particles within an elastomeric matrix. Contact resistance is improved by removing a thin layer is elastomeric material which remains after normal processing. The surface layer is removed by plasma etching so that the conductive particles protrude at both surfaces. The protruding particles can be plated to replace any conductive material removed by the etch.
    Type: Grant
    Filed: November 5, 1987
    Date of Patent: April 11, 1989
    Assignee: American Telephone and Telegraph Company AT&T Bell Laboratories
    Inventors: William R. Lambert, Neng-Hsing Lu, Ray D. Rust
  • Patent number: 4618477
    Abstract: A system for generating a substantially uniform plasma for processing a substrate having two major surfaces. Each of the substrate major surfaces may have electrically conductive portions. Two electrodes are oppositely disposed with respect to one another on either side of the substrate. A first r.f. power source is electrically connected to the first electrode and a second r.f. power source is electrically connected to the second electrode. The first and second r.f. power sources are out of phase with respect to one another, resulting in the generation of a substantially uniform plasma field.
    Type: Grant
    Filed: January 17, 1985
    Date of Patent: October 21, 1986
    Assignee: International Business Machines Corporation
    Inventors: Suryadevara V. Babu, Ronald S. Horwath, Neng-hsing Lu, John A. Welsh
  • Patent number: 4601807
    Abstract: A system for generating uniform gas flow in a plasma reactor chamber. A hollow electrode having two major surfaces and a plurality of apertures in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency power source for generating an electrical field. A second hollow electrode also having two major surfaces with a plurality of apertures in both surfaces is disposed opposite the first electrode. A second radio frequency power source is connected to the second electrode. A substrate is placed in the chamber between the first and second electrodes. Provision is made for introducing a gas to be converted in a reactive species by the radio frequency electrical field so that gas is uniformly distributed across the substrate.
    Type: Grant
    Filed: January 17, 1985
    Date of Patent: July 22, 1986
    Assignee: International Business Machines Corporation
    Inventors: John C. Lo, Neng-hsing Lu