Abstract: An apparatus for controlling an operation of a machine includes an optical recognition system, a control unit, and a remote control interface. The optical recognition system is configured to monitor and obtain actual operation information displayed on a panel of a processing machine in accordance with an operation time. The control unit is configured to receive the actual operation information and check the actual operation information with expected operation information. The expected operation information is obtained based on an operation model which is already built up corresponding to a current fabrication process. Deviation information between the actual operation information and the expected operation information is determined and converted into a parameter set. The remote control interface receives the parameter set and converts the parameter set into a control signal set to control the operation of the processing machine.

Abstract: An apparatus for controlling an operation of a machine includes an optical recognition system, a control unit, and a remote control interface. The optical recognition system is configured to monitor and obtain actual operation information displayed on a panel of a processing machine in accordance with an operation time. The control unit is configured to receive the actual operation information and check the actual operation information with expected operation information. The expected operation information is obtained based on an operation model which is already built up corresponding to a current fabrication process. Deviation information between the actual operation information and the expected operation information is determined and converted into a parameter set. The remote control interface receives the parameter set and converts the parameter set into a control signal set to control the operation of the processing machine.

Abstract: A method of forming a layer of hemispherical grain polysilicon over the lower electrode of a capacitor. The method comprises the steps of providing a substrate that has a field effect transistor already formed thereon, and then forming an insulating layer with a contact opening over the substrate. Subsequently, a polysilicon layer is formed over the insulating layer that completely fills the contact opening. This polysilicon layer is electrically coupled to one of the source/drain regions of the field effect transistor. Thereafter, a thin buffer layer is formed over the polysilicon layer, and then the thin buffer layer is patterned. The thin buffer layer is used as a mask for covering the polysilicon layer that is to be part of the lower electrode of a capacitor. Next, a plasma etching operation is carried out to remove the thin buffer layer and a portion of the polysilicon layer at the same time.