Patents by Inventor NENG JIANG
NENG JIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11148939Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.Type: GrantFiled: February 7, 2018Date of Patent: October 19, 2021Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: YungShan Chang, Ricky A. Jackson, Jeff W. Ritchison, Neng Jiang
-
Patent number: 10319899Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: GrantFiled: August 4, 2017Date of Patent: June 11, 2019Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
-
Publication number: 20180179054Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.Type: ApplicationFiled: February 7, 2018Publication date: June 28, 2018Inventors: YungShan Chang, Ricky A. Jackson, Jeff W. Ritchison, Neng Jiang
-
Patent number: 10009001Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.Type: GrantFiled: November 11, 2016Date of Patent: June 26, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Maciej Blasiak, Nicholas S. Dellas, Brian E. Goodlin
-
Patent number: 9939710Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: GrantFiled: June 24, 2016Date of Patent: April 10, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
-
Patent number: 9890040Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.Type: GrantFiled: November 5, 2014Date of Patent: February 13, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: YungShan Chang, Ricky A. Jackson, Jeff W. Ritchison, Neng Jiang
-
Publication number: 20170338401Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: ApplicationFiled: August 4, 2017Publication date: November 23, 2017Inventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
-
Patent number: 9755139Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: GrantFiled: June 13, 2015Date of Patent: September 5, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
-
Patent number: 9716013Abstract: A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.Type: GrantFiled: February 4, 2014Date of Patent: July 25, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Elizabeth Costner Stewart, Neng Jiang, Yung Shan Chang, Ricky Alan Jackson
-
Patent number: 9660603Abstract: A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.Type: GrantFiled: April 9, 2015Date of Patent: May 23, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Elizabeth Costner Stewart, Nicholas S. Dellas
-
Publication number: 20170063325Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.Type: ApplicationFiled: November 11, 2016Publication date: March 2, 2017Inventors: Neng Jiang, Maciej Blasiak, Nicholas S. Dellas, Brian E. Goodlin
-
Patent number: 9524881Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.Type: GrantFiled: April 30, 2015Date of Patent: December 20, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Maciej Blasiak, Nicholas S. Dellas, Brian E. Goodlin
-
Publication number: 20160322235Abstract: Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.Type: ApplicationFiled: April 30, 2015Publication date: November 3, 2016Inventors: Neng Jiang, Maciej Blasiak, Nicholas S. Dellas, Brian E. Goodlin
-
Publication number: 20160313627Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: ApplicationFiled: June 24, 2016Publication date: October 27, 2016Inventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
-
Publication number: 20160300693Abstract: A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.Type: ApplicationFiled: April 9, 2015Publication date: October 13, 2016Inventors: Neng Jiang, Elizabeth Costner Stewart, Nicholas S. Dellas
-
Patent number: 9405089Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: GrantFiled: November 5, 2014Date of Patent: August 2, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
-
Patent number: 9304283Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.Type: GrantFiled: November 5, 2014Date of Patent: April 5, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Joel Soman, Neng Jiang, Scott Summerfelt, Thomas Warren Lassiter, Nayeemuddin Mohammed, Mary Alyssa Drummond Roby
-
Publication number: 20150378127Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.Type: ApplicationFiled: November 5, 2014Publication date: December 31, 2015Inventors: YungShan Chang, Ricky A. Jackson, Jeff W. Ritchison, Neng Jiang
-
Publication number: 20150380637Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: ApplicationFiled: June 13, 2015Publication date: December 31, 2015Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
-
Publication number: 20150338604Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.Type: ApplicationFiled: November 5, 2014Publication date: November 26, 2015Inventors: Joel Soman, Neng Jiang, Scott Summerfelt, Thomas Warren Lassiter, Nayeemuddin Mohammed, Mary Alyssa Drummond Roby