Patents by Inventor Nerissa S. Draeger

Nerissa S. Draeger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flowable oxide deposition using rapid delivery of process gases
    Patent number: 8278224
    Abstract: Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: October 2, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Collin K. L. Mui, Lakshminarayana Nittala, Nerissa S. Draeger
  • Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
    Patent number: 8062983
    Abstract: Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: November 22, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Nerissa S. Draeger, Gary William Ray
  • VLSI fabrication processes for introducing pores into dielectric materials
    Patent number: 7972976
    Abstract: Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
    Type: Grant
    Filed: October 27, 2009
    Date of Patent: July 5, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Willibrordus Gerardus Maria van den Hoek, Nerissa S. Draeger, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary William Ray
  • VLSI fabrication processes for introducing pores into dielectric materials
    Patent number: 7629224
    Abstract: Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: December 8, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: Willibrordus Gerardus Maria van den Hoek, Nerissa S. Draeger, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary Ray
  • Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
    Patent number: 7510982
    Abstract: Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: March 31, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: Nerissa S. Draeger, Gary William Gray
  • VLSI fabrication processes for introducing pores into dielectric materials
    Patent number: 7166531
    Abstract: Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: January 23, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Willibrordus Gerardus Maria van den Hoek, Nerissa S. Draeger, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary William Ray