Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD).

Abstract: A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD).

Abstract: A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

Abstract: A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention.

Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system.

Abstract: A magneto-optic memory and a magnetic material is described incorporating a polarized light beam directed towards a magnetic material and an analyzer for intercepting the polarized light beam after passing through the magnetic material or after being reflected by the magnetic material. The magnetic material includes a matrix of metal such as iron, cobalt, nickel, and alloys thereof and a plurality of separated phases distributed in the matrix such as EuS, EuO, EuOTb, PtMnSb, MnAs, MnBi, MnSb, CrO.sub.2, CrTe, GdN, Gd.sub.4 C, other compounds of a rare earth element and manganese compounds. Terbium or neodymium may be dissolved in the matrix of metal and in the plurality of separated phases. The invention overcomes the problem of providing a magnetic material having a Curie point above room temperature, a square perpendicular hysteresis loop at room temperature, a large magneto-optic rotation at the wavelength of interest and a deposition temperature suitable depositing on polymer substrates.