Patents by Inventor Nestor Bojarczuk
Nestor Bojarczuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10304979Abstract: A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.Type: GrantFiled: January 30, 2015Date of Patent: May 28, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Marinus Hopstaken, Byungha Shin
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Patent number: 9939366Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: GrantFiled: January 30, 2017Date of Patent: April 10, 2018Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Patent number: 9911879Abstract: A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.Type: GrantFiled: June 18, 2015Date of Patent: March 6, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Marinus Hopstaken, Byungha Shin
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Publication number: 20170138841Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: ApplicationFiled: January 30, 2017Publication date: May 18, 2017Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Patent number: 9599513Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: GrantFiled: July 25, 2016Date of Patent: March 21, 2017Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Publication number: 20160334273Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: ApplicationFiled: July 25, 2016Publication date: November 17, 2016Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Patent number: 9417126Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: GrantFiled: June 27, 2014Date of Patent: August 16, 2016Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Publication number: 20160225939Abstract: A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.Type: ApplicationFiled: June 18, 2015Publication date: August 4, 2016Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Marinus Hopstaken, Byungha Shin
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Publication number: 20160225927Abstract: A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.Type: ApplicationFiled: January 30, 2015Publication date: August 4, 2016Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Marinus Hopstaken, Byungha Shin
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Publication number: 20160093755Abstract: Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.Type: ApplicationFiled: September 29, 2014Publication date: March 31, 2016Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Byungha Shin, Yu Zhu
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Patent number: 9287426Abstract: Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.Type: GrantFiled: September 29, 2014Date of Patent: March 15, 2016Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Talia S. Gershon, Supratik Guha, Byungha Shin, Yu Zhu
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Publication number: 20150377702Abstract: In one aspect, a spectrometer insert is provided. The spectrometer insert includes: an enclosed housing; a first transparent window on a first side of the enclosed housing; a second transparent window on a second side of the enclosed housing, wherein the first side and the second side are opposing sides of the enclosed housing; and a sample mounting and heating assembly positioned within an interior cavity of the enclosed housing in between, and in line of sight of, the first transparent window and the second transparent window. A method for using the spectrometer insert to locally heat a sample so as to measure temperature-dependent optical properties of the sample is also provided.Type: ApplicationFiled: June 27, 2014Publication date: December 31, 2015Inventors: Nestor A. Bojarczuk, Talia S. Gershon, Teodor K. Todorov, Theodore G. van Kessel
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Patent number: 8987590Abstract: Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of Mo. The method includes forming a back contact on a first surface of the CZTS layer opposite the first Mo layer and separating the first Mo layer and the MoS2 layer from the CZTS layer to expose a second surface of the CZTS layer opposite the first surface. The method further includes forming a buffer layer on the second surface of the CZTS layer.Type: GrantFiled: August 1, 2012Date of Patent: March 24, 2015Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Keith E. Fogel, Supratik Guha, Byungha Shin
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Publication number: 20140113416Abstract: A method for fabricating a carbon-based semiconductor device. A substrate is provided and source/drain contacts are formed on the substrate. A graphene channel is formed on the substrate connecting the source contact and the drain contact. A dielectric layer is formed on the graphene channel with a molecular beam deposition process. A gate contact is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections of the graphene channel between the gate contact and the source and drain contacts.Type: ApplicationFiled: June 28, 2012Publication date: April 24, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nestor A. BOJARCZUK, Matthew W. COPEL, Yu-ming LIN
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Patent number: 8680393Abstract: Embodiments relate to a solar cell apparatus including a molybdenum (Mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the Mo contact layer. The apparatus has no molybdenum disulfide (MoS2) layer located between the Mo contact layer and the annealed absorber layer. The apparatus further includes a buffer layer adjacent to the annealed absorber layer.Type: GrantFiled: August 6, 2012Date of Patent: March 25, 2014Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Keith E. Fogel, Supratik Guha, Byungha Shin
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Publication number: 20140038344Abstract: Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of Mo. The method includes forming a back contact on a first surface of the CZTS layer opposite the first Mo layer and separating the first Mo layer and the MoS2 layer from the CZTS layer to expose a second surface of the CZTS layer opposite the first surface. The method further includes forming a buffer layer on the second surface of the CZTS layer.Type: ApplicationFiled: August 1, 2012Publication date: February 6, 2014Applicant: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Keith E. Fogel, Supratik Guha, Byungha Shin
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Publication number: 20140034118Abstract: Embodiments relate to a solar cell apparatus including a molybdenum (Mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the Mo contact layer. The apparatus has no molybdenum disulfide (MoS2) layer located between the Mo contact layer and the annealed absorber layer. The apparatus further includes a buffer layer adjacent to the annealed absorber layer.Type: ApplicationFiled: August 6, 2012Publication date: February 6, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nestor A. Bojarczuk, Keith E. Fogel, Supratik Guha, Byungha Shin
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Publication number: 20140001440Abstract: A carbon-based semiconductor device includes a substrate, source/drain contacts, a graphene channel, a dielectric layer, and a gate. The source/drain contacts are formed on the substrate. The graphene channel is formed on the substrate connecting the source contact and the drain contact. The dielectric layer is formed on the graphene channel with a molecular beam deposition process. The gate contact is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections of the graphene channel between the gate contact and the source and drain contacts.Type: ApplicationFiled: September 13, 2012Publication date: January 2, 2014Applicant: International Business Machines CorporationInventors: Nestor A. BOJARCZUK, Matthew W. COPEL, Yu-ming LIN
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Patent number: 8518766Abstract: A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate.Type: GrantFiled: June 28, 2012Date of Patent: August 27, 2013Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Richard A. Haight, Vijay Narayanan, Martin P. O'Boyle, Vamsi K. Paruchuri
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Publication number: 20120270385Abstract: A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate.Type: ApplicationFiled: June 28, 2012Publication date: October 25, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Nestor A. Bojarczuk, Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Richard A. Haight, Vijay Narayanan, Martin P. O'Boyle, Vamsi K. Paruchuri