Patents by Inventor Öney Soykal

Öney Soykal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum metrology and quantum memory using defect sates with spin-3/2 or higher half-spin multiplets
    Patent number: 10762954
    Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: September 1, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Öney Soykal, Thomas L. Reinecke, Samuel G. Carter
  • Quantum Metrology and Quantum Memory Using Defect Sates with Spin -3/2 or Higher Half-Spin Multiplets
    Publication number: 20200098424
    Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 26, 2020
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Öney Soykal, Thomas L. Reinecke, Samuel G. Carter
  • Quantum Metrology and Quantum Memory Using Defect States With Spin-3/2 or Higher Half-Spin Multiplets
    Publication number: 20180090200
    Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide are provided. Also provided are quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.
    Type: Application
    Filed: September 22, 2017
    Publication date: March 29, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Öney Soykal, Thomas L. Reinecke