Abstract: A honeycomb structure includes a honeycomb structure part having porous partition walls which form a plurality of cells having a hexagonal cross-sectional shape and extending through the honeycomb structure part from an inflow end surface to an outflow end surface to become through channels of a fluid, and having an outer peripheral wall which is positioned at an outermost periphery. A porosity of the partition walls is from 35 to 60%, an average pore diameter of the partition walls is from 1 to 5 ?m, and among the cells, incomplete cells which are the cells formed by the partition walls and the outer peripheral wall are plugged from the inflow end surface to the outflow end surface.

Abstract: A gas sensor including an internal space, a first electrode, a second electrode, a pumping cell, a third electrode, a fourth electrode, a measuring cell, and a porous diffusion layer. The first and third electrodes, and the second and fourth electrodes are formed inside and outside the internal space, respectively. The pumping cell includes the first and second electrodes, and the measuring cell includes the third and fourth electrodes. The pumping cell pumps oxygen from the internal space when a predetermined voltage is applied between the first and second electrodes. The third electrode reduces an oxide gas component in a predetermined gas component to which a predetermined diffusion resistance has been applied by the porous diffusion layer. The measuring cell measures current flow between the third and fourth electrodes when a voltage corresponding to the degree of reduction in the third electrode is applied between the third and fourth electrodes.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° by CuK? X-ray.

Abstract: A method of drying a coating film formed on a surface of a PET film includes radiating an infrared ray having a dominant wavelength of 3.5 ?m or less from an infrared heater onto a PET film on whose surface the coating film containing water or an organic solvent having an absorption spectrum of 3.5 ?m or less has been formed, where the infrared heater has a structure such that an outer circumference of a filament is covered with a protection tube, and a partition wall for forming a flow passageway of a cooling fluid that restrains rise in temperature of a heater surface is provided in a space surrounding this protection tube, and bringing cooling air into contact with the surface of the PET film/coating film has been formed, so as to dry the PET film at a temperature lower than a glass transition point of the PET film.

Abstract: A piezoelectric element is provided with a ceramic substrate including a first surface on which a groove is formed, and a first electrode formed on the first surface of the ceramic substrate and including a crossing part that extends over the groove. At least one void is formed between a bottom of the groove and the crossing part of the first electrode.

Abstract: A semiconductor device satisfies the condition Db?(?)×Da, in which Da represents a distance between a top surface of a cathode segment and an end of an embedded gate segment facing an anode segment, and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment and an end of the cathode segment facing the anode segment.

Abstract: There is provided a heat exchanger element having a cylindrical outer peripheral wall and partition walls which are made mainly of SiC and form a plurality of cells functioning as passages for a first fluid inside the outer peripheral wall. More specifically, in the heat exchanger element, the outer peripheral wail and the partition wails mediate heat exchange between the first fluid and the second fluid, and the thickness T of the outer peripheral wall, the equivalent circle diameter D calculated from the area of the portion inside the outer peripheral wall in a cross section perpendicular to an axial direction of the outer peripheral wall, and thickness t of the partition walls satisfy the following formulae (1) to (3): Formula (1): 0.3 mm?T?4.0 mm, Formula (2): 15 mm?D?120 mm, and Formula (3): 0.04×T?t?0.6 mm.

Abstract: Provided is a silicon carbide ceramic having a small amount of resistivity change due to temperature change and being capable of generating heat by current application; and containing silicon carbide crystals having 0.1 to 25 mass % of 4H—SiC silicon carbide crystals and 50 to 99.9 mass % of 6H—SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass % or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding these silicon carbide particles to each other and having a silicon content of from 10 to 40 mass %.

Abstract: Provided is a method for producing a silicon carbide ceramic easily and simply producing a silicon carbide ceramic having a small amount in resistivity change due to temperature change and being capable of generating heat by current application; and having a forming raw material preparing step of mixing two or more kinds of silicon carbide ceramic powders containing 4H—SiC silicon carbide crystals at respectively different content ratio to prepare a forming raw material; a forming step of forming the forming raw material into a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic being adjusted at a content ratio of 4H—SiC silicon carbide crystal to a desired value.

Abstract: The present invention is directed to stably achieve a good thermal conductivity in a glass-ceramic composite material in which aluminum nitride particles are used as filler particles. The glass-ceramic composite material according to the present invention includes a glass matrix and filler particles, each of which is formed by an aluminum nitride particle having a surface layer on which an oxide film is formed, and arranged in the glass matrix. The present invention has characteristic features that the filler particle has a cornerless smooth surface, and that a percentage of the number of filler particles having a sphericity of 0.8 or greater, which is a value of a minor diameter divided by a major diameter, is higher than or equal to 70% on the condition where any fine particle of which particle diameter is smaller than 0.5 ?m is excluded from the number of the filler particles.

Abstract: A pulse controller performs a control to apply at least one high-energy first pulse P1 between a pair of electrodes in a first interval T1 to thereby promote a discharge breakdown between the pair of electrodes, and performs a control to apply at least two second pulses P2, which are lower in energy than the first pulse P1, between the pair of electrodes in a second interval T2 after the discharge breakdown has occurred between the pair of electrodes, to thereby maintain the discharge breakdown between the pair of electrodes.

Abstract: Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of AlyyGazzN formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0?yy?0.2.

Abstract: Provided is a semiconductor device of normally-off operation type having a low on-resistance. An epitaxial substrate for it includes: a base substrate; a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N at least containing Al and Ga and x1=0 and 0?y1?0.3; and a barrier layer made of a second group-III nitride having a composition of Inx2Aly2Gaz2N at least containing In and Al. The composition of the second group-III nitride is, in a ternary phase diagram for InN, AlN, and GaN, in a certain range that is determined in accordance with the composition of the first group-III nitride. The barrier layer has a thickness of 3 nm or less. A low-crystallinity insulating layer is further formed on the barrier layer. The low-crystallinity insulating layer is made of silicon nitride and has a thickness of 3 nm or less.

Abstract: A semiconductor device contains a first conductive type semiconductor substrate, at least one cathode formed on one surface of the semiconductor substrate, an anode formed on the other surface of the semiconductor substrate, and a gate electrode electrically insulated from the cathode, formed on the one surface of the semiconductor substrate to control current conduction between the cathode and the anode. The semiconductor substrate has a thickness of less than 460 rm.

Abstract: A semiconductor device contains a semiconductor substrate, a cathode, an anode, and a gate electrode. The semiconductor device has a cathode segment disposed in a portion corresponding to at least the cathode, an anode segment disposed in a portion corresponding to the anode, a plurality of embedded segments disposed in a portion closer to the cathode segment than to the anode segment, a takeoff segment disposed between the gate electrode and the embedded segments to electrically connect the gate electrode to the embedded segments, and a channel segment disposed between the adjacent embedded segments.

Abstract: It is provided a wavelength converting device oscillating an idler light having a wavelength of 5 to 10 ?m from a pump light. The wavelength of the idler light is longer than that of the pump light. The wavelength converting device includes a wavelength converting layer 5 of a semiconductor non-linear optical crystal and having a thickness of 50 ?m or smaller. The wavelength converting layer 5 includes a crystal orientation inversion structure wherein crystal orientation of the optical crystal is inverted at a predetermined period and at least one flat main face 5b. The device further includes a Peltier device 2 controlling a temperature of the wavelength converting layer 5; and a clad portion 4 joined with the flat main face 5b of the wavelength converting layer 5 and provided between the wavelength converting layer 5 and the Peltier device 2. The pump light, idler light and signal light satisfies a particular phase matching condition.

Abstract: It is provided a device oscillating an electromagnetic wave having a target frequency of 0.1 THz to 30 THz. The device includes a main body made of a non-linear optical crystal and a sub-wavelength grating structure formed on the main body. The sub-wavelength grating structure includes protrusions arranged in first direction “X” and second direction “Y” on the main body, first grooves 3X each provided between the adjacent protrusions and extending in the first direction, and second grooves 3Y each provided between the adjacent protrusions and extending in the second direction. Each of the protrusions includes a pair of first faces opposing in the first direction “X” with each other and a pair of second faces opposing in the second direction “Y” with each other. The width of the first face is made smaller from the main body 7 toward an upper end 2c of the protrusion 2.

Abstract: A drive circuit is laminated via a high exothermic element disposed on a power circuit, and it is configured so that the average thermal expansion coefficient of the side of the power circuit of the drive circuit board may be larger than the average thermal expansion coefficient of the side opposite to the power circuit. Thereby, the drive circuit board will be curved in the same direction as the power circuit board when the power circuit board is curved due to heat generation from the high exothermic element accompanying the operation of the module. Thereby, in a high-capacity module, while attaining reduction in size and weight, reduction in serge, and reduction in a loss, poor junction between the high exothermic element of the power circuit and the drive circuit board can be suppressed and heat generating from the high exothermic element can be more effectively released.

Abstract: A circuit board including a substrate having first and second dielectric layers of first and second dielectrics, the second dielectric containing 8 mass % or more of a glass net former component. At least one portion of an inner layer electrode has approximately two principal surfaces parallel to principal surfaces of the circuit board and a thickness of not less than 50 micrometers in a normal direction of the principal surfaces. The inner layer electrode and second dielectric layer contact with each other, and a ratio t/T of sum total thickness t of the second dielectric layer in contact with the inner layer electrode in a normal direction of the principal surface to sum total thickness T of the first dielectric layer in a normal direction of the principal surface is 0.1 or more.