Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

Abstract: In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

Abstract: In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

Abstract: In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

Abstract: In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

Abstract: An antenna multiplexer with a pi-network circuit is described, having an inductance connected in series and, on each of the two connection sides of the inductance, a capacitance connected in parallel. The pi-network circuit is used for effecting an impedance mismatch of a signal path of the antenna multiplexer.

Abstract: A filter structure comprises a filter having an input port and an output port and a carrier to which the filter is attached having a reference potential area. The input port includes a first pad for receiving an input signal and a second pad for a first reference potential related to the input signal. The output port has a third pad for outputting an output signal and a fourth pad for a second reference potential related to the output signal. A first connecting wire contacts the second pad at a first connection point and the reference potential area at a second connection point. A second connecting wire contacts the fourth pad at a third connection point and contacts the reference potential area at a fourth connection point. A distance between the second and the fourth connection point is smaller than a distance between the first and the third connection point.

Abstract: An antenna multiplexer with a pi-network circuit is described, comprising an inductance connected in series and, on each of the two connection sides of the inductance, a capacitance connected in parallel. The pi-network circuit is used for effecting an impedance mismatch of a signal path of the antenna multiplexer.

Abstract: A filter structure consists of a filter including a bulk acoustic wave filter or a thin film resonator filter having an input port and an output port, wherein the input port includes a first pad for receiving an input signal of the BAW filter or the TFR filter and a second pad for a first reference potential to which the input signal is related, and wherein the output port has a third pad for outputting an output signal of the BAW filter or the TFR filter and a fourth pad for a second reference potential to which the output signal is related, and wherein the second and the fourth pad on the filter are isolated from each other, a carrier to which the filter is attached and which has a reference potential area, a first connecting wire contacting the second pad at a first connection point and contacting the reference potential area at a second connection point, and a second connecting wire contacting the fourth pad at a third connection point and contacting the reference potential area at a fourth connection poi

Abstract: A FBAR ladder filter which may yield less degradation in the stopband near the passband edges than conventionally grounded FBAR ladder filters. For that purpose a thin film resonator (FBAR) ladder filter having a plurality of serially-coupled FBAR elements, each serially-coupled FBAR element including an upper metal electrode and a lower metal electrode, and a plurality of shunt-coupled FBAR elements, each shunt-coupled FBAR element including an upper metal ground electrode providing a ground node and a lower metal electrode, is provided with at least one capacitor element including an upper metal electrode and a lower metal electrode, wherein each capacitor element is serially coupled between two ground nodes so that the inductive coupling of the shunt-coupled FBAR elements is compensated.

Abstract: A FBAR ladder filter which may yield less degradation in the stopband near the passband edges than conventionally grounded FBAR ladder filters. For that purpose a thin film resonator (FBAR) ladder filter having a plurality of serially-coupled FBAR elements, each serially-coupled FBAR element including an upper metal electrode and a lower metal electrode, and a plurality of shunt-coupled FBAR elements, each shunt-coupled FBAR element including an upper metal ground electrode providing a ground node and a lower metal electrode, is provided with at least one capacitor element including an upper metal electrode and a lower metal electrode, wherein each capacitor element is serially coupled between two ground nodes so that the inductive coupling of the shunt-coupled FBAR elements is compensated.

Abstract: A process and a system are used for controlling the mixture composition for an Otto engine with an NOx storage catalyst during a regeneration phase. The process includes controlling, to the value of one, a ?-value (?M) of an exhaust gas fed to the NOx storage catalyst during a regeneration phase as a function of a ?-value (?K) of an exhaust gas emitted by the NOx storage catalyst. The system includes a control device for controlling, to the value of one, a ?-value (?M) of the exhaust gas fed to the NOx storage catalyst during the regeneration phase as a function of the ?-value (?K) of the exhaust gas emitted by the NOx storage catalyst.

Abstract: An arrangement for igniting a combustible gas mixture for the exhaust system of an internal-combustion engine has a frame device which is wound with a heating wire and can be installed into an exhaust gas train of the exhaust system transversely to the flow axis of the exhaust gas. A power supply device is provided for supplying the heating wire with electric current for generating a predetermined heating wire temperature. The frame device defines a flow range in which a heating wire grid is provided.

Abstract: A method and an arrangement are provided for reducing warm-up emissions in the exhaust system of a direct-injection internal-combustion engine. The method includes the steps of adjusting a lean air/fuel mixture for the engine-related combustion; implementing a late injection into the exhaust gas during the exhaust cycle of the internal-combustion engine, so that the exhaust gas contains an essentially stoichiometric air/fuel mixture; and igniting the stoichiometric air/fuel mixture contained in the exhaust gas in the proximity of a catalyst device for heating up the catalyst device.

Abstract: A process and a system are used for controlling the mixture composition for an Otto engine with an NOx storage catalyst during a regeneration phase. The process includes controlling, to the value of one, a &lgr;-value (&lgr;M) of an exhaust gas fed to the NOx storage catalyst during a regeneration phase as a function of a &lgr;-value (&lgr;K) of an exhaust gas emitted by the NOx storage catalyst. The system includes a control device for controlling, to the value of one, a &lgr;-value (&lgr;M) of the exhaust gas fed to the NOx storage catalyst during the regeneration phase as a function of the &lgr;-value (&lgr;K) of the exhaust gas emitted by the NOx storage catalyst.

Abstract: A method and an arrangement are provided for reducing warm-up emissions in the exhaust system of a direct-injection internal-combustion engine. The method includes the steps of adjusting a lean air/fuel mixture for the engine-related combustion; implementing a late injection into the exhaust gas during the exhaust cycle of the internal-combustion engine, so that the exhaust gas contains an essentially stoichiometric air/fuel mixture; and igniting the stoichiometric air/fuel mixture contained in the exhaust gas in the proximity of a catalyst device for heating up the catalyst device.

Abstract: An arrangement for igniting a combustible gas mixture for the exhaust system of an internal-combustion engine has a frame device which is wound with a heating wire and can be installed into an exhaust gas train of the exhaust system transversely to the flow axis of the exhaust gas. A power supply device is provided for supplying the heating wire with electric current for generating a predetermined heating wire temperature. The frame device defines a flow range in which a heating wire grid is provided.

Abstract: A method for operating an NOx trap for an internal combustion engine includes measuring parameters that influence the delay between the metering of a regenerating agent and its becoming effective in regenerating the NOx trap. Such parameters include the fuel film on an intake wall and the quantity of oxygen bonded in the catalytic converters upstream of the NOx trap. Measuring these parameters helps determine the quantity of regenerating agent or the number of working cycles required for regeneration of the NOx trap.