Abstract: Improved apparatus and methods for performing programmable built-in self-testing (PBIST) of memory serve to capture failure information while minimizing the silicon area used for implementation. Rather than saving all data subsequent to the first detection of a memory failure, on-chip storage elements save command, address, and program counter values corresponding to the instruction generating the first memory failure as well as to a number of subsequent instructions, but only a single memory block of data values is saved. The total silicon area of the elements that store the command, address, program counter, and data values is significantly less than that required to save all data corresponding to the first and subsequent faulty read operations. Methods of operation, as well as application of the apparatus to an electronic assembly, an electronic system, and a data processing system, are also described.