Abstract: The mica capacitor and fabrication method there for, resulting in parallely stacking basic laminates in which an electrode sheet is arranged between parallely stacked mica sheets to protrude in a zigzag manner, arranging an insulation plate in which the basic laminates are parallely stacked where the insulation plate protruding in a zigzag manner is formed between the basic laminates, and filling a conductor between insulation protrusions, whereby a parallel connection is implemented on the basic laminates themselves while a serial connection is implemented between the basic laminates, thereby enabling a provision of mica capacitor having a high voltage property.

Abstract: Disclosed is a semiconductor memory device capable of reducing power consumption. The semiconductor memory device according to the present invention divides a memory cell array into at least one cell array blocks and applies different voltage levels to the cell array blocks through a voltage divider. Accordingly, a voltage difference between a supply voltage level of each of the cell array blocks and a ground voltage level of each of the cell array blocks is (1/N)* Vdd voltage.