Patents by Inventor Ni-Min Chung

Ni-Min Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a capacitor deep trench and of etching a deep trench opening
    Patent number: 8377829
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: February 19, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • Method of manufacturing a capacitor deep trench and of etching a deep trench opening
    Patent number: 7344954
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Grant
    Filed: January 3, 2006
    Date of Patent: March 18, 2008
    Assignee: United Microelectonics Corp.
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING
    Publication number: 20080038931
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Application
    Filed: October 12, 2007
    Publication date: February 14, 2008
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING
    Publication number: 20070155089
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Application
    Filed: January 3, 2006
    Publication date: July 5, 2007
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang