Abstract: Disclosed is a variable-size and variable-amount topdressing device. The device includes a main frame; an image recognition unit; a variable-amount fertilizer applying portion; two electric push rods which are vertically and fixedly connected to inner opposite surfaces of the main frame respectively; and a variable-size fertilizer applying portion arranged at an output end of the variable-amount fertilizer applying portion, where a height of the variable-size fertilizer applying portion is adjusted by the two electric push rods, an output end of the variable-size fertilizer applying portion is arranged corresponding to the output end of the variable-amount fertilizer applying portion, and the variable-size fertilizer applying portion is used for adjusting a fertilizer applying range. The variable-amount fertilizer applying portion, the variable-size fertilizer applying portion and the two electric push rods are electrically connected to the image recognition unit.

Abstract: Disclosed in the present application are a method for improving performance of a low-intermediate frequency receiver, a storage medium, and a receiver. The method comprises: selecting a local oscillator signal from a preset local oscillator frequency set as an initial local oscillator signal to perform frequency mixing processing on an input signal, so as to obtain a low-intermediate frequency signal comprising a low-intermediate frequency useful signal and a low-intermediate frequency interference signal; determining whether an energy ratio of the low-intermediate frequency interference signal to the low-intermediate frequency useful signal is greater than a first preset ratio; and if the energy ratio is greater than the first preset ratio, selecting another local oscillator frequency from the preset local oscillator frequency set as the current local oscillator signal to process the input signal.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: The present disclosure discloses a system and method for batch and real-time feature computation, and the system includes: a management server, one or more batch feature computing units, one or more distributed computing units, one or more real-time feature computing units, an offline database and a real-time database. The management server receives a script containing feature computing logics, starts batch feature computation in a batch feature computing scenario, and deploys the script in a real-time feature computing scenario to generate a real-time computing plan, wherein the script containing the feature computing logics has unity for batch feature computing logics and real-time feature computing logics, and the real-time database obtains and stores data for the real-time feature computation from the offline database. According to the present disclosure, the batch feature computing logics and the real-time feature computing logics may be unified by the script.

Abstract: A method for assessing microbial drug resistance multi-level risks of antibiotic residues in water environments, belonging to the technical field of water environment assessment, comprises the following steps: S1, environment monitoring; S2, preliminary screening of antibiotics: S2-1, determination of n-octanol/water partition coefficient, and S2-2, determination of antibiotic environment concentration; S3, assessment of microbial drug resistance; and S4, high-level assessment. The assessment method of the present disclosure conducts a step-by-step assessment of target antibiotics or target antibiotic derivatives in water environment with risks.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: Disclosed is a variable-size and variable-amount topdressing device. The device includes a main frame; an image recognition unit; a variable-amount fertilizer applying portion; two electric push rods which are vertically and fixedly connected to inner opposite surfaces of the main frame respectively; and a variable-size fertilizer applying portion arranged at an output end of the variable-amount fertilizer applying portion, where a height of the variable-size fertilizer applying portion is adjusted by the two electric push rods, an output end of the variable-size fertilizer applying portion is arranged corresponding to the output end of the variable-amount fertilizer applying portion, and the variable-size fertilizer applying portion is used for adjusting a fertilizer applying range. The variable-amount fertilizer applying portion, the variable-size fertilizer applying portion and the two electric push rods are electrically connected to the image recognition unit.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: A joint structure of a telescopic cylinder includes a telescopic unit, an extension unit and a first fixing unit. The telescopic unit includes a first main body, a first combined structure and at least one first fixing structure. The extension unit includes a second main body, a second combined structure and at least one second fixing structure. The first combined structure is screwed to the second combined structure. The first fixing unit includes at least one first fixing body, and the first fixing body is simultaneously arranged in the first fixing structure and the second fixing structure and interferes with the first main body and the second main body so as to prevent the first combined structure and the second combined structure from spiral movement.

Abstract: Oligosaccharide riclinoctaose is used in preparation of a drug for treating and/or preventing ischemia-reperfusion injury (IRI). The oligosaccharide riclinoctaose has a structural formula as follows: The oligosaccharide riclinoctaose can significantly relieve postoperative liver injury, kidney injury, and brain injury in ischemia-reperfusion mice.

Abstract: An apparatus for forming methane from carbon dioxide and hydrogen is described. The apparatus comprises: a dielectric barrier discharge, DBD, device arranged to generate a plasma; and a passageway having an inlet for the carbon dioxide and the hydrogen and an outlet for the methane and including therein a catalyst comprising nickel and alumina. The passageway extends, at least in part, through the DBD device wherein, in use, the carbon dioxide is exposed to the catalyst in the presence of the hydrogen in the generated plasma, thereby forming the methane from at least some of the carbon dioxide and the hydrogen. A method, a use and a catalyst are also described.

Abstract: Oligosaccharide riclinoctaose is used in preparation of a drug for treating and/or preventing ischemia-reperfusion injury (IRI). The oligosaccharide riclinoctaose has a structural formula as follows: The oligosaccharide riclinoctaose can significantly relieve postoperative liver injury, kidney injury, and brain injury in ischemia-reperfusion mice.

Abstract: A lurasidone solid dispersion and a preparation method thereof. The solid dispersion includes a mixture of lurasidone, a pharmaceutical carrier and a plasticizer, in which the lurasidone is in a free base form. The lurasidone solid dispersion obtained by the preparation method has characteristics of high dissolution rate (over 30%) in partial neutral medium (such as pH 6.0), significantly increased bioavailability, and significantly reduced food effect, which overcomes the excessive medication limitation in the prior art, avoids the reduction or even inefficiency of the curative effect caused by improper medication of patients, ensures the normal exertion of the medication effect, thereby increases the flexibility and compliance of patients to take medicine.

Abstract: An electrical socket includes a magnet connected to a shield. The shield blocks access to receptacles of the socket when the magnet is at a rest position but moves away and allows access to the receptacles when the magnet is moved away from its rest position. The magnet is attached to a spring so that the spring pulls the magnet toward the rest position. A plug includes a plug magnet to attract the socket's magnet. When the plug is brought close to the socket, the socket magnet is pulled away from the rest position, moving the shield away and allowing the plug to be inserted.