Patents by Inventor Nian Chen

Nian Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250072148
    Abstract: In some embodiments, the present disclosure relates to an image sensor including a substrate having a first side and a second side opposite the first side; a photodetector region within the substrate; a gate structure on the first side of the substrate over the photodetector region; a deep trench isolation (DTI) structure surrounding the photodetector region and extending from the first side of the substrate to the second side; a doped floating node region within the substrate at the first side and disposed between the gate structure and the DTI structure; and a floating node on the first side of the substrate, contacting a top surface of the DTI structure and overlying the doped floating node region.
    Type: Application
    Filed: August 23, 2023
    Publication date: February 27, 2025
    Inventors: Yen-Ting Chiang, Yen-Yu Chen, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20250072135
    Abstract: A semiconductor device, and method of fabricating the same, includes a first substrate, the first substrate including at least one visible light photosensor disposed between a first side and a second side of the first substrate, a second substrate including an infrared light photosensor disposed between a second side of the second substrate and a first side of the second substrate, and a metalens disposed between the visible light photosensor and the infrared light photosensor, the metalens configured to focus infrared light impinging on a surface of the first substrate onto the infrared light photosensor.
    Type: Application
    Filed: August 25, 2023
    Publication date: February 27, 2025
    Inventors: Hsiang-Lin Chen, Yi-Shin Chu, Cheng-Yu Huang, Wei-Chieh Chiang, Dun-Nian Yaung
  • Patent number: 12234537
    Abstract: The present invention provides a medium-carbon boron-containing steel. The chemical components of the medium-carbon boron-containing steel are as follows in mass percentage: 0.37-0.45% of C; 0.17-0.37% of Si; 0.60-0.90% of Mn; 0.020-0.060% of Al; 0.0008-0.0035% of B; 0.030-0.060% of Ti; P?0.025%; S?0.025%; Cr?0.25%; Ni?0.20%; Mo?0.10%; Cu?0.20%; and the remainder is Fe and inevitable impurities. The controlled rolling and controlled cooling method suitable for the on-line normalizing treatment of medium-carbon boron-containing steel sequentially comprises the following steps: heating, rough rolling, finishing rolling, cooling by passing through water, and cold bed slow cooling. The medium-carbon boron-containing steel can meet the requirements of having a hardness of 190-220 HBW, an actual grain size that is ?7 grade, and a banded structure that is ?2 grade.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: February 25, 2025
    Assignee: DAYE SPECIAL STEEL CO., LTD.
    Inventors: Nian Zhang, Wenchao Zheng, Xin Ling, Ping Chen, Guopiao Huang, Yingwu He
  • Patent number: 12216249
    Abstract: The disclosure discloses an optical imaging lens, which sequentially includes, from an object side to an image side along an optical axis: a first lens having positive refractive power; a second lens having refractive power; a third lens having refractive power; a fourth lens having negative refractive power, wherein an object-side surface thereof is a concave surface, while an image-side surface is a convex surface; a fifth lens having positive refractive power; and a sixth lens having negative refractive power, wherein an object-side surface thereof is a convex surface. TTL is a distance from an object-side surface of the first lens to an imaging surface of the optical imaging lens on the optical axis, ImgH is a half of a diagonal length of an effective pixel region on the imaging surface of the optical imaging lens, TTL and ImgH meet 4.0 mm<ImgH/(TTL/ImgH)<7.0 mm. Therefore, the optical imaging lens has high imaging quality.
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: February 4, 2025
    Assignee: ZHEJIANG SUNNY OPTICS CO., LTD.
    Inventors: Nian Chen, Kaiyuan Zhang, Xujiong Wu, Fujian Dai, Liefeng Zhao
  • Patent number: 12218165
    Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Hsing-Chih Lin, Che-Wei Chen
  • Patent number: 12218106
    Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Hsing-Chih Lin, Jen-Cheng Liu, Yi-Shin Chu, Ping-Tzu Chen, Che-Wei Chen
  • Patent number: 12211876
    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.
    Type: Grant
    Filed: June 16, 2023
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 12205868
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first via disposed within a dielectric structure on a substrate, and a second via disposed within the dielectric structure and laterally separated from the first via by the dielectric structure. The first via has a first width that is smaller than a second width of the second via. An interconnect wire vertically contacts the second via and extends laterally past an outermost sidewall of the second via. A through-substrate via (TSV) is arranged over the second via and extends through the substrate. The TSV has a minimum width that is smaller than the second width of the second via. The second via has opposing outermost sidewalls that are laterally outside of the TSV.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: January 21, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Hsing-Chih Lin, Jen-Cheng Liu, Yi-Shin Chu, Ping-Tzu Chen
  • Publication number: 20250006598
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes affixing a spacer structure to a bottom side of a plurality of leads of a leadframe. A semiconductor die is attached to a top side of a die pad of the leadframe. The semiconductor die, the leadframe, and the spacer structure are encapsulated with an encapsulant. Portions of the spacer structure and portions of the leads of the plurality of leads are exposed at a bottom side of the encapsulant.
    Type: Application
    Filed: June 28, 2023
    Publication date: January 2, 2025
    Inventors: Yao Jung Chang, Tzu Ya Fang, Yu Ling Tsai, Jian Nian Chen, Yen-Chih Lin
  • Publication number: 20240213766
    Abstract: A circuit-breaker includes a battery module terminal, a battery pack system terminal, and a plurality of switching channels connected in parallel and coupled between the battery module terminal and the battery pack system terminal. Each of the switching channels includes one or more semiconductor switching devices and is configured to turn on/off a circuit between the battery module terminal and the battery pack system terminal. During abnormality diagnosis, at least one of the switching channels is set to be in a turned-on state.
    Type: Application
    Filed: March 7, 2024
    Publication date: June 27, 2024
    Inventors: Junlin LI, Changlai LIU, Shizhong XIA, Huan JIANG, Nian CHEN, Che LIU
  • Publication number: 20240154186
    Abstract: A low-voltage lithium battery circuitry includes a busbar, a battery signal transmitter unit, a battery management system, and a lithium battery module connected to the battery management system through the busbar and the battery signal transmitter unit. The lithium battery module is configured to provide energy for an external load and supply power to the battery management system. The battery management system is configured to monitor electrical parameters acquired in the lithium battery module and, when any one of the electrical parameters exceeds a protection threshold range corresponding thereto, perform a protection operation.
    Type: Application
    Filed: January 11, 2024
    Publication date: May 9, 2024
    Inventors: Huan JIANG, Changlai LIU, Shizhong XIA, Nian CHEN
  • Patent number: 11899178
    Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes, from an object side to an image side along an optical axis, a first lens with a positive refractive power, a second lens, a third lens with a positive refractive power, a fourth lens, a fifth lens with a positive refractive power and a sixth lens with a negative refractive power, wherein a total effective focal length f of the optical imaging lens assembly and an entrance pupil diameter (EPD) of the optical imaging lens assembly meet f/EPD<1.35; and an effective focal length f3 of the third lens, an effective focal length f5 of the fifth lens and an effective focal length f1 of the first lens meet 0.9<(f3+f5)/f1<1.7.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: February 13, 2024
    Assignee: ZHEJIANG SUNNY OPTICS CO., LTD.
    Inventors: Nian Chen, Qi Wu, Fujian Dai, Liefeng Zhao
  • Publication number: 20240038683
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes placing a package substrate on a carrier substrate, forming a frame on the package substrate, and affixing an active side of a semiconductor die on the package substrate. The semiconductor die together with the frame and the package substrate form a cavity between the semiconductor die and the package substrate. At least a portion of the semiconductor die and the package substrate are encapsulated with an encapsulant. The frame is configured to prevent the encapsulant from entering the cavity.
    Type: Application
    Filed: July 28, 2022
    Publication date: February 1, 2024
    Inventors: Tzu Ya Fang, Yen-Chih Lin, Jian Nian Chen, Moly Lee, Yi Xiu Xie, Vanessa Wyn Jean Tan, Yao Jung Chang, Yi-Hsuan Tsai, Xiu Hong Shen, Kuan Lin Huang
  • Publication number: 20230150935
    Abstract: The present disclosure relates to compounds that are capable of modulating calcium ion homeostasis and treating disorders related thereto. The disclosure further relates to methods of making the aforementioned compounds.
    Type: Application
    Filed: February 12, 2021
    Publication date: May 18, 2023
    Inventors: Ohyun Kwon, Changmin Xie, Jiannan Zhao, Nathan John Dupper, Aslam Shaikh, Jau-Nian Chen, Adam Langenbacher
  • Patent number: 11579406
    Abstract: The present disclosure discloses an optical imaging lens assembly including, sequentially from an object side to an image side along an optical axis, a first lens having refractive power; a second lens having refractive power; a third lens having negative refractive power; a fourth lens having refractive power and a convex object-side surface; a fifth lens having refractive power and a concave object-side surface; a sixth lens having refractive power; a seventh lens having refractive power; and an eighth lens having refractive power. A total effective focal length f of the optical imaging lens assembly and half of a maximal field-of-view Semi-FOV of the optical imaging lens assembly satisfy: f*tan(Semi-FOV)>5.5 mm. A total effective focal length f of the optical imaging lens assembly and an effective focal length f1 of the first lens satisfy: 0.5<f/f1<1.5.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: February 14, 2023
    Inventors: Nian Chen, Kaiyuan Zhang, Fujian Dai, Liefeng Zhao
  • Patent number: 11561377
    Abstract: The present disclosure discloses an optical imaging lens assembly, which includes: a first lens having positive refractive power and a convex object-side surface; a second lens having refractive power, and a concave image-side surface; a third lens having refractive power; a fourth lens having refractive power; and a fifth lens having negative refractive power, a concave object-side surface, and a concave image-side surface. The optical imaging lens assembly satisfies TL/ImgH<1.35; 0.6<R9/f5<1.2 and 0.5<ET5/ET4<1, where TTL is a total length of the optical imaging lens assembly, ImgH is a half diagonal length of an effective pixel area on an imaging plane, f5 is an effective focal length of the fifth lens, R9 is a radius of curvature of the object-side surface of the fifth lens, ET4 and ET5 are edge thicknesses of the fourth and the fifth lenses, respectively.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: January 24, 2023
    Assignee: ZHEJIANG SUNNY OPTICAL CO., LTD
    Inventors: Nian Chen, Kaiyuan Zhang, Fujian Dai, Liefeng Zhao
  • Publication number: 20220334361
    Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a variable diaphragm; a first lens; a second lens; a third lens; a fourth lens; a fifth lens, an object-side surface thereof is a convex surface; a sixth lens; and a seventh lens. a center thickness CT1 of the first lens on the optical axis and an air space T67 between the sixth lens and the seventh lens on the optical axis satisfy CT1/T67<1.0.
    Type: Application
    Filed: April 2, 2022
    Publication date: October 20, 2022
    Inventors: Nian CHEN, Haidong XIAO, Xiangxi WU, Wuchao XU, Fujian DAI, Liefeng ZHAO
  • Patent number: 11397471
    Abstract: An action evaluation model building apparatus and an action evaluation model building method thereof are provided. The action evaluation model building apparatus stores a plurality of raw data sets and a plurality of standard action labels corresponding thereto. Based on machine learning algorithms, the action evaluation model building apparatus computes the raw data sets and performs a supervised learning to build a feature vector creation model and a classifier model. The action evaluation model building apparatus determines a representation action feature vector of each standard action label by randomly generating a plurality of action feature vectors and inputting them into the classifier model. The action evaluation model building apparatus builds an action evaluation model based on the feature vector creation model, the classifier model and the representation action feature vectors.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 26, 2022
    Assignee: INSTITUTE FOR INFORMATION INDUSTRY
    Inventors: Chen-Kuo Chiang, Yun-Zhong Lu, Bo-Nian Chen
  • Patent number: D961512
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: August 23, 2022
    Assignee: SHENZHEN TECHOSS TECHNOLOGY CO., LTD.
    Inventor: Nian Chen
  • Patent number: D1060433
    Type: Grant
    Filed: October 25, 2023
    Date of Patent: February 4, 2025
    Assignee: Dongguan Lingdu Industrial Co., Ltd.
    Inventor: Nian Chen