Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

Abstract: The present invention discloses a gas-insulating medium and its application. The gas-insulating medium includes the following components by mass: 8.4-76.7 parts of trans-1,1,1,4,4,4-hexafluoro-2-butene, and 23.3-91.6 parts of octafluorocyclobutane. The gas-insulating medium of the present invention has a dielectric strength better sulfur hexafluoride, and a low liquefaction temperature, and can be applied in a wider temperature range. In addition, the gas-insulating medium in certain compositions has similar properties with a single component insulating gas. when the gas leaks, the ratio of trans-1,1,1,4,4,4-hexafluoro-2-butene and octafluorocyclobutane remains unchanged, and during the maintenance of electrical equipment, trans-1,1,1,4,4,4-hexafluoro-2-butene and octafluorocyclobutane can be directly supplemented according to a certain ratio, without other operations such as analysis and detection.

Abstract: In some embodiments, the present disclosure relates to an image sensor including a substrate having a first side and a second side opposite the first side; a photodetector region within the substrate; a gate structure on the first side of the substrate over the photodetector region; a deep trench isolation (DTI) structure surrounding the photodetector region and extending from the first side of the substrate to the second side; a doped floating node region within the substrate at the first side and disposed between the gate structure and the DTI structure; and a floating node on the first side of the substrate, contacting a top surface of the DTI structure and overlying the doped floating node region.

Abstract: A semiconductor device, and method of fabricating the same, includes a first substrate, the first substrate including at least one visible light photosensor disposed between a first side and a second side of the first substrate, a second substrate including an infrared light photosensor disposed between a second side of the second substrate and a first side of the second substrate, and a metalens disposed between the visible light photosensor and the infrared light photosensor, the metalens configured to focus infrared light impinging on a surface of the first substrate onto the infrared light photosensor.

Abstract: The present invention provides a medium-carbon boron-containing steel. The chemical components of the medium-carbon boron-containing steel are as follows in mass percentage: 0.37-0.45% of C; 0.17-0.37% of Si; 0.60-0.90% of Mn; 0.020-0.060% of Al; 0.0008-0.0035% of B; 0.030-0.060% of Ti; P?0.025%; S?0.025%; Cr?0.25%; Ni?0.20%; Mo?0.10%; Cu?0.20%; and the remainder is Fe and inevitable impurities. The controlled rolling and controlled cooling method suitable for the on-line normalizing treatment of medium-carbon boron-containing steel sequentially comprises the following steps: heating, rough rolling, finishing rolling, cooling by passing through water, and cold bed slow cooling. The medium-carbon boron-containing steel can meet the requirements of having a hardness of 190-220 HBW, an actual grain size that is ?7 grade, and a banded structure that is ?2 grade.

Abstract: The disclosure discloses an optical imaging lens, which sequentially includes, from an object side to an image side along an optical axis: a first lens having positive refractive power; a second lens having refractive power; a third lens having refractive power; a fourth lens having negative refractive power, wherein an object-side surface thereof is a concave surface, while an image-side surface is a convex surface; a fifth lens having positive refractive power; and a sixth lens having negative refractive power, wherein an object-side surface thereof is a convex surface. TTL is a distance from an object-side surface of the first lens to an imaging surface of the optical imaging lens on the optical axis, ImgH is a half of a diagonal length of an effective pixel region on the imaging surface of the optical imaging lens, TTL and ImgH meet 4.0 mm<ImgH/(TTL/ImgH)<7.0 mm. Therefore, the optical imaging lens has high imaging quality.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first via disposed within a dielectric structure on a substrate, and a second via disposed within the dielectric structure and laterally separated from the first via by the dielectric structure. The first via has a first width that is smaller than a second width of the second via. An interconnect wire vertically contacts the second via and extends laterally past an outermost sidewall of the second via. A through-substrate via (TSV) is arranged over the second via and extends through the substrate. The TSV has a minimum width that is smaller than the second width of the second via. The second via has opposing outermost sidewalls that are laterally outside of the TSV.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes affixing a spacer structure to a bottom side of a plurality of leads of a leadframe. A semiconductor die is attached to a top side of a die pad of the leadframe. The semiconductor die, the leadframe, and the spacer structure are encapsulated with an encapsulant. Portions of the spacer structure and portions of the leads of the plurality of leads are exposed at a bottom side of the encapsulant.

Abstract: A circuit-breaker includes a battery module terminal, a battery pack system terminal, and a plurality of switching channels connected in parallel and coupled between the battery module terminal and the battery pack system terminal. Each of the switching channels includes one or more semiconductor switching devices and is configured to turn on/off a circuit between the battery module terminal and the battery pack system terminal. During abnormality diagnosis, at least one of the switching channels is set to be in a turned-on state.

Abstract: A low-voltage lithium battery circuitry includes a busbar, a battery signal transmitter unit, a battery management system, and a lithium battery module connected to the battery management system through the busbar and the battery signal transmitter unit. The lithium battery module is configured to provide energy for an external load and supply power to the battery management system. The battery management system is configured to monitor electrical parameters acquired in the lithium battery module and, when any one of the electrical parameters exceeds a protection threshold range corresponding thereto, perform a protection operation.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes, from an object side to an image side along an optical axis, a first lens with a positive refractive power, a second lens, a third lens with a positive refractive power, a fourth lens, a fifth lens with a positive refractive power and a sixth lens with a negative refractive power, wherein a total effective focal length f of the optical imaging lens assembly and an entrance pupil diameter (EPD) of the optical imaging lens assembly meet f/EPD<1.35; and an effective focal length f3 of the third lens, an effective focal length f5 of the fifth lens and an effective focal length f1 of the first lens meet 0.9<(f3+f5)/f1<1.7.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes placing a package substrate on a carrier substrate, forming a frame on the package substrate, and affixing an active side of a semiconductor die on the package substrate. The semiconductor die together with the frame and the package substrate form a cavity between the semiconductor die and the package substrate. At least a portion of the semiconductor die and the package substrate are encapsulated with an encapsulant. The frame is configured to prevent the encapsulant from entering the cavity.

Abstract: The present disclosure relates to compounds that are capable of modulating calcium ion homeostasis and treating disorders related thereto. The disclosure further relates to methods of making the aforementioned compounds.

Abstract: The present disclosure discloses an optical imaging lens assembly including, sequentially from an object side to an image side along an optical axis, a first lens having refractive power; a second lens having refractive power; a third lens having negative refractive power; a fourth lens having refractive power and a convex object-side surface; a fifth lens having refractive power and a concave object-side surface; a sixth lens having refractive power; a seventh lens having refractive power; and an eighth lens having refractive power. A total effective focal length f of the optical imaging lens assembly and half of a maximal field-of-view Semi-FOV of the optical imaging lens assembly satisfy: f*tan(Semi-FOV)>5.5 mm. A total effective focal length f of the optical imaging lens assembly and an effective focal length f1 of the first lens satisfy: 0.5<f/f1<1.5.

Abstract: The present disclosure discloses an optical imaging lens assembly, which includes: a first lens having positive refractive power and a convex object-side surface; a second lens having refractive power, and a concave image-side surface; a third lens having refractive power; a fourth lens having refractive power; and a fifth lens having negative refractive power, a concave object-side surface, and a concave image-side surface. The optical imaging lens assembly satisfies TL/ImgH<1.35; 0.6<R9/f5<1.2 and 0.5<ET5/ET4<1, where TTL is a total length of the optical imaging lens assembly, ImgH is a half diagonal length of an effective pixel area on an imaging plane, f5 is an effective focal length of the fifth lens, R9 is a radius of curvature of the object-side surface of the fifth lens, ET4 and ET5 are edge thicknesses of the fourth and the fifth lenses, respectively.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a variable diaphragm; a first lens; a second lens; a third lens; a fourth lens; a fifth lens, an object-side surface thereof is a convex surface; a sixth lens; and a seventh lens. a center thickness CT1 of the first lens on the optical axis and an air space T67 between the sixth lens and the seventh lens on the optical axis satisfy CT1/T67<1.0.